Биполярный транзистор 2SA1488 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1488
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 15 MHz
Ёмкость коллекторного перехода (Cc): 90 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO220F
2SA1488 Datasheet (PDF)
2sa1488 2sa1488a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SA1488 -60
2sa1488.pdf
2SA1488/1488ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A)Application : Audio and General PurposeExternal Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.20.210.12SA1488 2SA1488A 2SA1488 2SA1488Ac0.52.8VCBO 60 80 V 100max 10
2sa1488 2sa1488a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE
2sa1488.pdf
isc Silicon PNP Power Transistor 2SA1488DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1488a.pdf
isc Silicon PNP Power Transistor 2SA1488ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa1483.pdf
2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25C) Characteristics Sym
2sa1480 2sc3790.pdf
Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.
2sa1481 2sc2960.pdf
Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating
2sa1487 e.pdf
Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1
2sa1487.pdf
Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1
2sa1485.pdf
2SA1485Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1485Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 200
2sa1484.pdf
2SA1484Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1484Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJu
2sa1489.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION With TO-3PN package Complement to type 2SC3853 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1489.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa1483.pdf
SMD Type TransistorsPNP Transistors2SA1483 Features1.70 0.1 High transition frequency Low collector output capacitance Complementary to 2SC38030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage
2sa1484.pdf
SMD Type orSMD Type TransistICsPNP Transistors2SA1484SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=-90V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90
2sa1480 3ca1480.pdf
2SA1480(3CA1480) PNP /SILICON PNP TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu
2sa1486.pdf
isc Silicon PNP Power Transistor 2SA1486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
2sa1489.pdf
isc Silicon PNP Power Transistor 2SA1489DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3853Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
Другие транзисторы... 2SA1480F , 2SA1481 , 2SA1482 , 2SA1483 , 2SA1484 , 2SA1485 , 2SA1486 , 2SA1487 , 2SC2625 , 2SA1488A , 2SA1489 , 2SA149 , 2SA1490 , 2SA1491 , 2SA1492 , 2SA1492O , 2SA1492P .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050