2SA1513 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA1513 DESCRIPTION With TO-3PML package High current capability Low collector saturation voltage APPLICATIONS For high speed and high power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Maximum absolute ratings(Ta=25 ) S

isc Silicon PNP Power Transistor 2SA1513 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High Currrent Capacity Low Collector Saturation Voltage- V = -0.5V(Max.)@ I = -12A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed and high power switching applications. ABSOL

Ordering number ENN2159B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1518/2SC3912 Switching Applications (With Bias Resistance) Application Package Dimensions Switching circuits, inverters circuits, inferface unit mm circuits, driver circuits. 2018B [2SA1518/2SC3912] Features 0.4 On-chip bias resistance R1=10k , R2=10k . 0.16 3 Small-sized package CP. 0

Ordering number ENN2160B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1519/2SC3913 Switching Applications (with Bias Resistance) Applications Package Dimensions Switching circuits, inverter circuits, interface circuits, unit mm driver circuits. 2018B [2SA1519/2SC3913] Features 0.4 On-chip bias resistance R1=4.7k , R2=4.7k . 0.16 3 Small-sized package CP.

2SA1514K FRA Datasheet High-voltage Amplifier Transistor (-120V,-50mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO -120V IC -50mA SMT3 lFeatures lInner circuit l l 1)High breakdown voltage. (BVCEO=-120V) 2)Complements the 2SC3906K FRA lApplication l HIGH VOLTAGE AMPLIFIER lPackaging specifications l Basic

Medium Power Transistor ( 32V, 1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1132 2SA1515S VCE(sat) = 0.2V(Typ.) + + 4 0.2 2 0.2 - - 4.5 +0.2 -0.1 (IC / IB = 500mA / 50mA) 1.5 +0.2 + 1.6 0.1 -0.1 - 2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.05 0.4 +0.1 Structure -0.05 + + 0.5 0.1 0.

Medium Power Transistor ( 32V, 1A) 2SA1515S / 2SB1237 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SA1515S 2SB1237 + 2.5 0.2 VCE(sat) = 0.2V(Typ.) + + + - 4 0.2 2 0.2 6.8 0.2 - - - (IC / IB = 500mA / 50mA) 2) Compliments 2SD1858 Structure 0.45 +0.15 0.65Max. -0.05 Epitaxial planar type + PNP silicon transistor 0.5 0.1 - 0.45 +0.15 2.5

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Units mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO -120 V Collec

Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC1788 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Param

Transistor 2SA1512 Silicon PNP epitaxial planer type For low-frequency output amplification Unit mm Complementary to 2SC1788 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Optimum for low-voltage operation and for converters. Allowing supply with the radial taping. Optimum for high-density mounting. Absolute Maximum Ratings (Ta=25 C) marking 1 2 3 Param

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SA1515S TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching Application 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-

JMnic Product Specification Silicon PNP Power Transistors 2SA1516 DESCRIPTION With TO-3P(I) package Complement to type 2SC3907 High collector voltage APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

SMD Type Transistors PNP Transistors 2SA1518 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 Complementary to 2SC3912 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1510 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-100mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 Complementary to 2SC3900 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1519 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-500mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SC3913 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1514K SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Breakdown Voltage Lead Free/RoHS Compliant. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3906K +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -1

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1516 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3907 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier