2SA1530 - описание и поиск аналогов

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

SMD Type Transistors PNP Transistors 2SA1530A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-150mA 1 2 Collector Emitter Voltage VCEO=-50V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co

Ordering number ENN2438B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1539/2SC3954 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1539/SC3954] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=500MHz. High breakdown voltage VCEO=120Vmin. 3.0 Sm

Ordering number ENN2436C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1537/2SC3952 High-Definition CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1537/2SC3952] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=700MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Ordering number ENN2437B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1538/2SC3953 High-Definition CRT Display Video Output Applications Package Dimensions Applications High-definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1538/2SC3953] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=400MHz. High breakdown voltage VCEO=120Vmin. 3.0 S

Ordering number ENN2435B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1536/2SC3951 High-Definition CRT Display Video Output Applications Applications Package Dimensions High definition CRT display video output, wide-band unit mm amplifier. 2042B [2SA1536/2SC3951] 8.0 Features 4.0 3.3 1.0 1.0 High fT fT=600MHz. High breakdown voltage VCEO=70Vmin. 3.0 Sma

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym

Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v

Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Unit mm Complementary to 2SC3944 and 2SC3944A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.1 0.1 High transition frequency fT Makes up a complementary pair w

Transistor 2SA1533 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC3939 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base v

Transistor 2SA1532 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC3930 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Sym

Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz

Transistor 2SA1531, 2SA1531A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SC3929 and 2SC3929A Features 2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magaz

Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC3940 and 2SC3940A 5.0 0.2 4.0 0.2 Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertion possible. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 )

SMD Type Transistors PNP Transistors 2SA1532 Features High transition frequency fT. Complementary to 2SC3930 1.Base 2.Emitter 3.Colletor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po

SMD Type Transistors PNP Transistors 2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W

isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min) -2SA1535 (BR)CEO = -180V(Min) -2SA1535A Good Linearity of h FE Complement to Type 2SC3944/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum