Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Transistor2SA1533Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC39395.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.15 +0.15Collector to base v

Ordering number:ENN2438BPNP/NPN Epitaxial Planar Silicon Transistors2SA1539/2SC3954High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1539/SC3954]8.0Features4.03.31.0 1.0 High fT : fT=500MHz. High breakdown voltage : VCEO=120Vmin.3.0 Sm

Ordering number:ENN2436CPNP/NPN Epitaxial Planar Silicon Transistors2SA1537/2SC3952High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1537/2SC3952]8.0Features4.03.31.0 1.0 High fT : fT=700MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Ordering number:ENN2437BPNP/NPN Epitaxial Planar Silicon Transistors2SA1538/2SC3953High-Definition CRT DisplayVideo Output ApplicationsPackage DimensionsApplications High-definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1538/2SC3953]8.0Features4.03.31.0 1.0 High fT : fT=400MHz. High breakdown voltage : VCEO=120Vmin.3.0 S

Ordering number:ENN2435BPNP/NPN Epitaxial Planar Silicon Transistors2SA1536/2SC3951High-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions High definition CRT display video output, wide-bandunit:mmamplifier.2042B[2SA1536/2SC3951]8.0Features4.03.31.0 1.0 High fT : fT=600MHz. High breakdown voltage : VCEO=70Vmin.3.0 Sma

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

Power Transistors2SA1535, 2SA1535ASilicon PNP epitaxial planar typeFor low-frequency driver and high power amplificationUnit: mmComplementary to 2SC3944 and 2SC3944A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesSatisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.1 0.1High transition frequency fTMakes up a complementary pair w

Transistor2SA1532Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC39302.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Sym

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1531, 2SA1531ASilicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SC3929 and 2SC3929AFeatures2.1 0.1 Low noise voltage NV. 0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magaz

Transistor2SA1534, 2SA1534ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC3940 and 2SC3940A5.0 0.2 4.0 0.2Features Complementary pair with 2SC3940 and 2SC3940A. Allowing supply with the radial taping and automatic insertionpossible.0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbo

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JMnic Product Specification Silicon PNP Power Transistors 2SA1535 2SA1535A DESCRIPTION With TO-220Fa package Complement to type 2SC3944/3944A Optimum for the driver-stage of a 60W to 100W output amplifier APPLICATIONS For low-frequency driver and high power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25)

SMD Type TransistorsPNP Transistors2SA1532 Features High transition frequency fT. Complementary to 2SC39301.Base2.Emitter3.Colletor Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -30 mA Collector Po

SMD Type TransistorsPNP Transistors2SA1531A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SC3929A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 Collector - Emitter Voltage VCEO -55 V Emitter - Base Voltage VEBO -5 Collector Curr

SMD Type TransistorsPNP Transistors2SA1530ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-150mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Co

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1535/A DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) -2SA1535 = -180V(Min) -2SA1535A Good Linearity of hFE Complement to Type 2SC3944/A APPLICATIONS Designed for low-frequency driver and high power amplifi- cation, is optimum for the driver-stage of a 60W

isc Silicon PNP Power Transistors 2SA1535/ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min) -2SA1535(BR)CEO= -180V(Min) -2SA1535AGood Linearity of hFEComplement to Type 2SC3944/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency driver and high power amplifi-cation, is optimum