2SA1562 - описание и поиск аналогов

Ordering number EN2261A PNP Epitaxial Planar Silicon Transistors 2SA1562 High-hFE AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers. unit mm 2045B Features [2SA1562] Adoption of MBIT process. High DC current gain. Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. 1 Base 2 Collector 3

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2SA1566 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1566 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW

JMnic Product Specification Silicon PNP Power Transistors 2SA1567 DESCRIPTION With TO-220F package Complement to type 2SC4064 Low collector-emitter saturation voltage APPLICATIONS For DC motor driver ,chopper regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute

E (250 ) Built-in Diode at C E B Equivalent Low VCE (sat) 2SA1568 curcuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) Application DC Motor Driver, Chopper Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20 (TO220F) Symbol Conditions Ratings Unit Symbol Ratings Unit 0

LOW VCE (sat) 2SA1567 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064) Application DC Motor Driver, Chopper Regulator and General Purpose (Ta=25 C) External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics Unit Ratings Symbol Ratings Unit Symbol Conditions 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 50 V ICBO VCB= 50

SMD Type Transistors PNP Transistors 2SA1566 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low frequency amplifier 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Vo

isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO DC Current Gain- h = 50(Min)@ (V = -1V,I = -6A) FE CE C Low Saturation Voltage- V = -0.35V(Max)@ (I = -6A, I -0.6A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for DC motor driver, c