Ordering number:EN2261APNP Epitaxial Planar Silicon Transistors2SA1562High-hFE AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2045BFeatures [2SA1562] Adoption of MBIT process. High DC current gain. Large current capacity. Low collector-to-emitter saturation voltage. High VEBO.1 : Base2 : Collector3 :

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2SA1566Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1566Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mW

JMnic Product Specification Silicon PNP Power Transistors 2SA1567 DESCRIPTION With TO-220F package Complement to type 2SC4064 Low collector-emitter saturation voltage APPLICATIONS For DC motor driver ,chopper regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute

E(250)Built-in Diode at CEBEquivalent Low VCE (sat) 2SA1568curcuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)Application : DC Motor Driver, Chopper Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20 (TO220F)Symbol Conditions Ratings UnitSymbol Ratings Unit0

LOW VCE (sat) 2SA1567Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064)Application : DC Motor Driver, Chopper Regulator and General Purpose(Ta=25C) External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsUnitRatingsSymbol Ratings Unit Symbol Conditions0.24.20.210.1c0.52.8 AVCBO 50 V ICBO VCB=50

SMD Type TransistorsPNP Transistors2SA1566SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Low frequency amplifier1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Vo

isc Silicon PNP Power Transistor 2SA1567DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ (V = -1V,I = -6A)FE CE CLow Saturation Voltage-: V = -0.35V(Max)@ (I = -6A, I -0.6A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC motor driver, c