Биполярный транзистор 2SA1567 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1567
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 330 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO220F
2SA1567 Datasheet (PDF)
2sa1567.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1567 DESCRIPTION With TO-220F package Complement to type 2SC4064 Low collector-emitter saturation voltage APPLICATIONS For DC motor driver ,chopper regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute
2sa1567.pdf
LOW VCE (sat) 2SA1567Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4064)Application : DC Motor Driver, Chopper Regulator and General Purpose(Ta=25C) External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsUnitRatingsSymbol Ratings Unit Symbol Conditions0.24.20.210.1c0.52.8 AVCBO 50 V ICBO VCB=50
2sa1567.pdf
isc Silicon PNP Power Transistor 2SA1567DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEODC Current Gain-: h = 50(Min)@ (V = -1V,I = -6A)FE CE CLow Saturation Voltage-: V = -0.35V(Max)@ (I = -6A, I -0.6A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC motor driver, c
2sa1562.pdf
Ordering number:EN2261APNP Epitaxial Planar Silicon Transistors2SA1562High-hFE AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers. unit:mm2045BFeatures [2SA1562] Adoption of MBIT process. High DC current gain. Large current capacity. Low collector-to-emitter saturation voltage. High VEBO.1 : Base2 : Collector3 :
2sa1561.pdf
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2sa1566.pdf
2SA1566Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1566Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mW
2sa1568.pdf
E(250)Built-in Diode at CEBEquivalent Low VCE (sat) 2SA1568curcuitCSilicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)Application : DC Motor Driver, Chopper Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20 (TO220F)Symbol Conditions Ratings UnitSymbol Ratings Unit0
2sa1566.pdf
SMD Type TransistorsPNP Transistors2SA1566SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Low frequency amplifier1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Vo
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050