Биполярный транзистор 2SA1604R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1604R
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 5.6 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO39A-1
2SA1604R Datasheet (PDF)
2sa1606 2sc4159.pdf
Ordering number:EN2535PNP/NPN Epitaxial Planar Silicon Transistors2SA1606/2SC4159High-Voltage Switching, AF 100WDriver ApplicationsApplications Package Dimensions High-voltage switching, AF power amplifier, 100Wunit:mmoutput predrivers.2041[2SA1606/2SC4159]Features Micaless package facilitating mounting.E : EmitterC : CollectorB : Base( ) : 2SA1606SANYO :
2sa1607 2sc4168.pdf
Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sa1601.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SA1601 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emi
2sa1600.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em
2sa1601.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1601 Case : ITO-220Unit : mm(TP15T4)-15A PNPRATINGS
2sa1600.pdf
SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1600 Case : ITO-220Unit : mm(TP12T4)-12A PNPRATINGS
2sa1608.pdf
SMD Type TransistorsPNP Transistors2SA1608 Features High fT : fT=400MHz Complementary to 2SC37391.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -40 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -500 mA Collector Power Diss
2sa1607.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1607SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesFast switching speed.High gain-bandwidth product.1 2+0.1+0.050.95-0.1 0.1-0.01Low saturation voltage.+0.11.9-0.1 Complementary to 2SC41681.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base
2sa1601.pdf
isc Silicon PNP Power Transistor 2SA1601DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -7.5ACE(sat) CLarge Current Capability-I = -15ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is ide
2sa1600.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1600 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas
2sa1606.pdf
isc Silicon PNP Power Transistor 2SA1606DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC4159Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, AF power amplifier,100W output predrivers.ABSOLUTE MAXIMUM RATINGS(Ta=2
Другие транзисторы... 2SA15H , 2SA16 , 2SA160 , 2SA1600 , 2SA1601 , 2SA1602 , 2SA1603 , 2SA1604 , TIP42 , 2SA1604S , 2SA1604T , 2SA1604U , 2SA1605 , 2SA1606 , 2SA1606D , 2SA1606E , 2SA1607 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050