2SA1618 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1618 Audio Frequency General Purpose Amplifier Applications Unit: mm Small package (dual type) High voltage and high current: V = -50 V, I = -150 mA (max) CEO C High h h = 120~400 FE: FE Excellent hFE linearity: hFE (IC = -0.1 mA)/ hFE (IC = -2 mA) = 0.95 (typ.) Complementary to 2S

DATA SHEETSILICON POWER TRANSISTORS2SA1615, 1615-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturationand are ideal for high-efficiency DC/DC converters due to the fast switching speed.FEATURES Large current capacity:IC(DC): -10 A, IC(pulse): -15 A High hF

Transistor2SA1619, 2SA1619ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC4208 and 2SC4208A5.0 0.2 4.0 0.2Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertionpossible.Absolute Maximum Ratings (Ta=25C) 0.7 0.1Parameter Symb

Transistor2SA1619, 2SA1619ASilicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC4208 and 2SC4208A5.0 0.2 4.0 0.2Features Complementary pair with 2SC4208 and 2SC4208A. Allowing supply with the radial taping and automatic insertionpossible.Absolute Maximum Ratings (Ta=25C) 0.7 0.1Parameter Symb

2SA1617Silicon PNP EpitaxialApplicationHigh voltage amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1617Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJun

2SA1611 -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain A High Voltage L3 Complementary to 2SC4177 3 Top View C B1CLASSIFICATION OF hFE 1 22 K EProduct-Rank 2SA1611-M4 2SA1611-M5Range 90~180 135~27

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors 2SA1611 TRANSISTOR (PNP) FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Vol

2SA1 61 1TRANSISTOR(PNP)FEATURES SOT323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR V Emitter-Base Voltage -5 V EBOI Collector Current -100 mA CP Colle

SMD Type TransistorsPNP Transistors2SA1617SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-100mA1 2 Collector Emitter Voltage VCEO=-50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -55 C

SMD Type TransistorsPNP Transistors2SA1612 Features High DC Current Gain Complementary to 2SC41801.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -50 mA Collector Power Di

SMD Type TransistorsPNP Transistors2SA1611 Features High DC Current Gain High Voltage Complementary to 2SC41771.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -100 mA

Production specification PNP Silicon Epitaxial Transistor for High-speed Switching 2SA1615 FEATURES Large current capacity: Pb IC(DC):-10A,IC(pulse):-15A. Lead-free High hFE and low collector saturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)-0.25V(@IC=-4A,IB=-0.05A) TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise speci

RoHS 2SA1611SOT-323 2SA1611 TRANSISTOR (PNP) 1. BASE 2. EMITTER FEATURES 1. 25 0. 053. COLLECTOR Power dissipation PCM : 0.15 W (Tamb=25) 2. 30 0. 05 Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range Unit: mm TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (T

isc Silicon PNP Power Transistor 2SA1615DESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available for

isc Silicon PNP Power Transistor 2SA1615-ZDESCRIPTIONLarge current capacity:I = -10A I =-15AC(DC) C(pulse)High h and low saturation voltage:FEh = 200min (V =-2V,I =-0.5A)FE CE CV -0.25V (I =-4A,I =-0.05A)CE(sat) C B100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SA1615 is available fo