2SA1647 - описание и поиск аналогов

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

isc Silicon PNP Power Transistor 2SA1647 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators, D

DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

isc Silicon PNP Power Transistor 2SA1647-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transistor is ideal for use in Switching regulators,

Ordering number EN2926A PNP Epitaxial Planar Silicon Transistor 2SA1641 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation voltage. 2045B Fast switching speed. [2SA1641] Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller. 1 Base 2 Collector 3

Preliminary Data Sheet 2SA1646,2SA1646-Z R07DS0048EJ0200 Rev.2.00 Silicon Power Transistor Jul 01, 2010 Description The 2SA1646 is a mold power transistor developed for high-speed switching and features a very low collector-to- emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-v

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET SILICON POWER TRANSISTOR 2SA1648,1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWINGS (Unit mm) speed switching and features a very low collector-to-emitter saturation voltage. 2.3 0.2 6.5 0.2 This transistor is ideal for use in switching regulators, DC/DC 5.0 0.2 0.5 0.

DATA SHEET SILICON POWER TRANSISTOR 2SA1646, 2SA1646-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1646 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

DATA SHEET SILICON POWER TRANSISTOR 2SA1649, 2SA1649-Z PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1649 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid dr

DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid drivers,

DATA SHEET SILICON POWER TRANSISTOR 2SA1645, 2SA1645-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1645 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drive

JMnic Product Specification Silicon PNP Power Transistors 2SA1640 DESCRIPTION With TO-220F package Low collector saturation voltage Good linearity of hFE APPLICATIONS For switching regulator ,driver and power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1644 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1645 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1646 DESCRIPTION With TO-220 package Fast switching speed Low collector saturation voltage APPLICATIONS For use in switching power supplies,DC-DC converters,motor drivers,solenoid drivers, and other low-voltage power supply devices, as well as for high current switching PINNING PIN DESCRIPTION 1 Emit

JMnic Product Specification Silicon PNP Power Transistors 2SA1643 DESCRIPTION With TO-220F package Complement to type 2SC4327 Low collector saturation voltage APPLICATIONS For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDI

isc Silicon PNP Power Transistor 2SA1640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -30V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ (I = -3A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, driver and power switching applications. ABSOLU

isc Silicon PNP Power Transistor 2SA1644 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1648 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Power Transistor 2SA1646-Z DESCRIPTION Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features a very low V , is ideal for use CE(sat)

isc Silicon PNP Power Transistor 2SA1645-Z DESCRIPTION Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other

isc Silicon PNP Power Transistor 2SA1645 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION

isc Silicon PNP Power Transistor 2SA1649 DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This transis

isc Silicon PNP Power Transistor 2SA1648-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

isc Silicon PNP Power Transistor 2SA1646 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Fast Switching Speed Low Saturation Voltage- V = -0.3V(Max)@I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power transistor is developed for high-speed switching and features

isc Silicon PNP Power Transistor 2SA1649-Z DESCRIPTION Available for high-current control in small dimension Low collector saturation voltage V = -0.3V(Max)@ I = -3A CE(sat) C Fast switching speed High DC current gain and excellent linearity 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This trans

isc Silicon PNP Power Transistor 2SA1643 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -35V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max)@ (I = -5A, I = -0.3A) CE(sat) C B Complement to Type 2SC4327 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE