Справочник транзисторов. 2SA1674

 

Биполярный транзистор 2SA1674 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1674
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120(typ) MHz
   Ёмкость коллекторного перехода (Cc): 15 pf
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: MT2

 Аналоги (замена) для 2SA1674

 

 

2SA1674 Datasheet (PDF)

 ..1. Size:39K  panasonic
2sa1674.pdf

2SA1674
2SA1674

Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450

 ..2. Size:44K  panasonic
2sa1674 e.pdf

2SA1674
2SA1674

Transistor2SA1674Silicon PNP epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SC43912.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).High collector to emitter voltage VCEO.0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450

 8.1. Size:176K  jmnic
2sa1670.pdf

2SA1674
2SA1674

JMnic Product Specification Silicon PNP Power Transistors 2SA1670 DESCRIPTION With TO-3PML package Complement to type 2SC4385 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 8.2. Size:149K  jmnic
2sa1679.pdf

2SA1674
2SA1674

JMnic Product Specification Silicon PNP Power Transistors 2SA1679 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

 8.3. Size:186K  jmnic
2sa1671.pdf

2SA1674
2SA1674

JMnic Product Specification Silicon PNP Power Transistors 2SA1671 DESCRIPTION With TO-3PML package Complement to type 2SC4386 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 8.4. Size:211K  jmnic
2sa1673.pdf

2SA1674
2SA1674

JMnic Product Specification Silicon PNP Power Transistors 2SA1673 DESCRIPTION With TO-3PML package Complement to type 2SC4388 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 8.5. Size:165K  jmnic
2sa1672.pdf

2SA1674
2SA1674

JMnic Product Specification Silicon PNP Power Transistors 2SA1672 DESCRIPTION With TO-3PML package Complement to type 2SC4387 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

 8.6. Size:203K  sanken-ele
2sa1670.pdf

2SA1674
2SA1674

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.7. Size:28K  sanken-ele
2sa1673.pdf

2SA1674

2SA1673Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4388)Application : Audio and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.20.2 5.515.60.23.45VCBO 180 V ICBO VCB=180V 10max AVCEO 180 V IEBO VEB=6V

 8.8. Size:203K  sanken-ele
2sa1672.pdf

2SA1674
2SA1674

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.9. Size:285K  shindengen
2sa1679.pdf

2SA1674
2SA1674

SHINDENGENSwitching Power TransistorLSV SeriesOUTLINE DIMENSIONS2SA1679 Case : ITO-220Unit : mm(TP5T4)-5A PNPRATINGS

 8.10. Size:217K  inchange semiconductor
2sa1670.pdf

2SA1674
2SA1674

isc Silicon PNP Power Transistor 2SA1670DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4385Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 8.11. Size:192K  inchange semiconductor
2sa1679.pdf

2SA1674
2SA1674

isc Silicon PNP Power Transistor 2SA1679DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -40(V)(Min.)CEO(SUS)Low Collector Saturation Voltage:V = -0.3(V)(Max.)@I = -2.5ACE(sat) CLarge Current Capability-I = -5ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for mid-switching applications, and is idea

 8.12. Size:217K  inchange semiconductor
2sa1671.pdf

2SA1674
2SA1674

isc Silicon PNP Power Transistor 2SA1671DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4386Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.13. Size:222K  inchange semiconductor
2sa1673.pdf

2SA1674
2SA1674

isc Silicon PNP Power Transistor 2SA1673DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4388Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.14. Size:216K  inchange semiconductor
2sa1672.pdf

2SA1674
2SA1674

isc Silicon PNP Power Transistor 2SA1672DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC4387Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

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