2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit: mmPower Switching Applications Low collector-emitter saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW (Ta = 25 C) High-speed switching: tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time: t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi

Ordering number:EN3200PNP/NPN Epitaxial Planar Silicon Transistors2SA1685/2SC4443High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2059 Low saturation voltage.[2SA1685/2SC4443]B : BaseC : CollectorE : Emitter( ) : 2SA1685SANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25C

Ordering number:EN3011PNP Epitaxial Planar Silicon Transistor2SA1682TV Camera Deflection,High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2018Afrequency chacateristic (Cre : 1.5pF typ).[2SA1682] Excellent DC current gain ratio (hFE ratio : 1.0 typ).

Ordering number:EN3013PNP/NPN Epitaxial Planar Silicon Transistors2SA1687/2SC4446Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1687/unit:mm2SC4446-applied sets to be made small and slim.2059 High VEBO.[2SA1687/2SC4446]B : BaseC : CollectorE : Emitter( ) : 2SA1687SANYO : MCPSpecifi

Ordering number:EN2798APNP Epitaxial Planar Silicon Transistors2SA1688High-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers,unit:mmoscillators. converters, and IF amplifiers.2059A[2SA1688]Features High power gain : PG=22dB typ (f=100MHz). Very small-sized package permitting 2SA168

Ordering number:EN3233PNP Epitaxial Planar Silicon Transistor2SA1689TV Camera DeflectionHigh-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small reverse transfer capacitance and excellent high2003Afrequency chacacteristic.[2SA1689] Excellent DC current gain. Adoption of FBET process.JEDEC : TO-92 B : BaseEIAJ : SC

Ordering number:EN3012PNP/NPN Epitaxial Planar Silicon Transistors2SA1683/2SC4414Low-Frequency General-Purpose Amplifier,Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO>80V.2033[2SA1683/2SC4414]B : BaseC : CollectorE : Emitter( ) : 2SA1683SANYO : SPASpecificationsAbsolute

SMD Type TransistorsPNP Transistors2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SC44431.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5

SMD Type TransistorsPNP Transistors2SA1682SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-300V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co

SMD Type TransistorsPNP Transistors2SA16811.70 0.1 Features Low saturation voltage High speed switching time Small flat package0.42 0.10.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC44091.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VC