2SA1680 - описание и поиск аналогов

2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1680 Power Amplifier Applications Unit mm Power Switching Applications Low collector-emitter saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW (Ta = 25 C) High-speed switching tstg = 300 ns (typ.) Complementary to 2SC4408. Absolute

2SA1681 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1681 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 300 ns (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC4409 Maxi

Ordering number EN3200 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1685/2SC4443 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2059 Low saturation voltage. [2SA1685/2SC4443] B Base C Collector E Emitter ( ) 2SA1685 SANYO MCP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number EN3011 PNP Epitaxial Planar Silicon Transistor 2SA1682 TV Camera Deflection, High-Voltage Driver Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2018A frequency chacateristic (Cre 1.5pF typ). [2SA1682] Excellent DC current gain ratio (hFE ratio 1.0 typ).

Ordering number EN3013 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1687/2SC4446 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Very small-sized package permitting the 2SA1687/ unit mm 2SC4446-applied sets to be made small and slim. 2059 High VEBO. [2SA1687/2SC4446] B Base C Collector E Emitter ( ) 2SA1687 SANYO MCP Specifi

Ordering number EN2798A PNP Epitaxial Planar Silicon Transistors 2SA1688 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators. converters, and IF amplifiers. 2059A [2SA1688] Features High power gain PG=22dB typ (f=100MHz). Very small-sized package permitting 2SA168

Ordering number EN3233 PNP Epitaxial Planar Silicon Transistor 2SA1689 TV Camera Deflection High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Small reverse transfer capacitance and excellent high 2003A frequency chacacteristic. [2SA1689] Excellent DC current gain. Adoption of FBET process. JEDEC TO-92 B Base EIAJ SC

Ordering number EN3012 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1683/2SC4414 Low-Frequency General-Purpose Amplifier, Low-Frequency Power Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO>80V. 2033 [2SA1683/2SC4414] B Base C Collector E Emitter ( ) 2SA1683 SANYO SPA Specifications Absolute

SMD Type Transistors PNP Transistors 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SC4443 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VEBO -5

SMD Type Transistors PNP Transistors 2SA1682 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-300V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Co

SMD Type Transistors PNP Transistors 2SA1681 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4409 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VC