2SA1703 - описание и поиск аналогов

Ordering number EN3023 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1703/2SC4483 Low-Frequency Amplifier, Electronic Governor Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm 2064 [2SA1703/2SC4483] E Emitter C Collector B Base ( ) 2SA1703 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol

2SA1703(3CA1703) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier, electronic governor applications. Features Low V . CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V E

Ordering number EN3024 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1704/2SC4484 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit mm 2064 Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

Ordering number ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm High breakdown voltage, large current capacity. 2064A Fast switching speed. [2SA1709/2SC4489] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Base 2 Collector ( ) 2SA1709 3

Ordering number ENN3025 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1705/2SC4485 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1705/2SC4485] 2.5 Adoption of FBET process. 1.45 Fast switching speed. 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector (

Ordering number EN3094A 2SA1708 / 2SC4488 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1708 / 2SC4488 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed. Specifications ( ) 2SA1708 Absolute Maximum Ratings at Ta=25 C Parameter Symbol

Ordering number EN2974A PNP Epitaxial Planar Silicon Transistor 2SA1700 High-Voltage Driver Applications Features Package Dimensions High breakdown voltage. unit mm Adoption of MBIT process. 2045B Excellent hFE linearity. [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collector SANYO TP unit mm 2044B [2SA1700] 1 Base 2 Collector 3 Emitter 4 Collecto

Ordering number EN3091 PNP Epitaxial Planar Silicon Transistor 2SA1702 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Low saturation votlage. 2064 Large current capacity. [2SA1702] Fast switching speed. E Emitter C Collector B Base SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C

Ordering number ENN3026A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1706/2SC4486 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit mm 2064A Features [2SA1706/2SC4486] 2.5 Adoption of FBET, MBIT processes. 1.45 Large current capacity and wide ASO. 6.9 1.0 Fast switching speed. 0.6 0.9 0.5

Ordering number ENN3093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1707/2SC4487 High-Current Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacity, wide ASO. 2064A Low collector-to-emitter saturation voltage. [2SA1707/2SC4487] Fast switching speed. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Em

Ordering number EN3022 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1701/2SC4481 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor driver applications. 2064 [2SA1701/2SC4481] Features Large current capacity. Low collector-to-emitter saturation voltage. E Emitt

Ordering number EN3094B 2SA1708/2SC4488 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) - 100V, - 1A, Low VCE sat , PNP NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1708 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Ba

Ordering number EN3093A 2SA1707/2SC4487 Bipolar Transistor http //onsemi.com (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed ( )2SA1707 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings

Ordering number EN3026B 2SA1706 Bipolar Transistor http //onsemi.com ( ) 50V, 2A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET, MBIT processes Large current capacity and wide ASO Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Rating

Ordering number EN3096A 2SA1709/2SC4489 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed ( )2SA1709 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC

Ordering number EN3025A 2SA1705 Bipolar Transistor http //onsemi.com ( ) -50V, -1A, Low VCE sat , PNP Single NMP Applicaitons Voltage regulators, relay drivers, lamp drivers Features Adoption of FBET process Fast switching speed Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --60 V Collecto

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES * High breakdown voltage. * Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1700L-x-TM3-T 2SA1700G-x-TM3-T TO-251 B C E Tube 2SA1700L-x-TN3-R 2SA1700G-x-TN3-R TO-252 B C E Tape Ree

2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Coll

isc Silicon PNP Power Transistor 2SA1700 DESCRIPTION High breakdown voltage Low Collector-Emitter Saturation Voltage High Power Dissipation- P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL