2SA1771 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA1771 DESCRIPTION With TO-220F package Low collector saturation voltage High speed switching time APPLICATIONS High current switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS MAX U

isc Silicon PNP Power Transistor 2SA1771 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.4V(Max)@ I = -6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Ordering number EN3481 PNP Epitaxial Planar Silicon Transistor 2SA1778 VHF Converter, Local Oscillator Applications Features Package Dimensions High power gain (PG=13dB typ ; f=0.4GHz). unit mm High cutoff frequency (fT=1.2GHz typ). 2018A Low Cob (Cob=1.0pF typ). [2SA1778] Complementary pair with the 2SC4269. C Collector B Base E Emitter SANYO CP Specific

Ordering number ENN3578 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1770/2SC4614 High-Voltage Switching Applications Features Package Dimensions Adoption of MBIT process. unit mm High breakdown voltage and large current capacity. 2064A [2SA1770/2SC4614] 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Emitter 2 Collector ( ) 2SA1770 3 Base 2.54 2.54 Specificat

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25 C) Paramete

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet General Purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1) General Purpose. 2) Complementary 2SC5658/2SC4617EB 2SA1774 2SA1576UB /2SC4617/2SC4081UB/2S

General Purpose Transistor (50V, 0.15A) 2SA1774EB Applications Dimensions (Unit mm) General purpose small signal amplifier. EMT3F Features 1) Excellent hFE linearity. 1.6 0.7 2) Complements the 2SC4617EB. 0.26 (3) Structure PNP silicon epitaxial. planar transistor. (1) (2) 0.13 0.5 0.5 1.0 Each lead has same dimensions (1) Base (2) Emitter Abbreviate

2SA2029 / 2SA1774EB / 2SA1774 2SA1576UB / 2SA1576U3 / 2SA1037AK Datasheet General purpose Transistor (-50V, -150mA) lOutline l Parameter Value SOT-723 SOT-416FL VCEO -50V IC -150mA 2SA2029 2SA1774EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Excellent hFE linearity. 2)Complements the 2SC5658/2SC4617EB/ 2SA1774 2SA1576UB 2SC4617/2SC

2SA2029FHA / 2SA1774EB / 2SA1774FRA / 2SA1576UB / 2SA1576AFRA / 2SA1037AKFRA 2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK Datasheet PNP -150mA -50V General Purpose Transistors AEC-Q101 Qualified Outline VMT3 EMT3F Parameter Value Collector Collector VCEO 50V Base Base IC 150mA Emitter Emitter 2SA2029 2SA1774EB 2SA2029FHA (SC-105AA) (SC-89) F

2SA1774-Q/2SA1774-R/2SA1774-S Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 PNP Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junctio

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

MCC 2SA1774-Q Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1774-R CA 91311 Phone (818) 701-4933 2SA1774-S Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Small Package Epitaxial Transistor Mounting any position Epoxy meet

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features Reduces Board Space High hFE, 210-460 (typical) SC-75

Ordering number EN3578A 2SA1770/2SC4614 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single NMP Features Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)180 V C

2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416/SC-90 package which is designed for low power surface mount http //onsemi.com applications, where board space is at a premium. Features COLLECTOR Reduces Board Space 3 High hFE, 210-460 (typical) L

UNISONIC TECHNOLOGIES CO., LTD 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1774L-x-AE3-R 2SA1774G-x-AE3-R SOT-23 E B C Tape Reel 2SA1774L-x-AN3-R 2SA1774G-x-AN3-R SOT-523 E B C

2SA1774 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES SOT-523 Low COB. COB=4.0pF Complements the 2SC4617 A M 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 L 2 Product-Rank 2SA1774-Q 2SA1774-R 2SA1774-S K E Range 120 270 180 390 270 560 D Marki

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors SOT-523 2SA1774 TRANSISTOR (PNP) FEATURES Reduces Board Space High hFE 1. BASE Low VCE(sat) 2. EMTTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base V

2SA1774 SOT-523 Transistor(PNP) SOT-523 1. BASE 2. EMTTER 3. COLLECTOR Features Reduces Board Space High hFE 120 560 Low VCE(sat)

2SA1774 PNP 3 3 1 2 SC-89 (SOT-523F) WEITRON http //www.weitron.com.tw 2SA1774 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 120 560 (IC=-1 mAdc, VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitanc

SMD Type Transistors PNP Transistors 2SA1778 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA Collector Emitter Voltage VCEO=-15V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 Complementary to 2SC4269 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors PNP Transistors 2SA1774 SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 Features 2 1 Reduces Board Space High hFE Low VCE(sat) 3 0.3 0.05 0.5+0.1 -0.1 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - E

CHENMKO ENTERPRISE CO.,LTD 2SA1774GP SURFACE MOUNT General Purpose PNP Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Power Amplifier . FEATURE SC-75/SOT-416 * Surface mount package. (SC-75/SOT-416) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA) * Low cob. Cob=4.0pF(Typ.) * PC= 150mW (Collector power dissipation). 0.1 0.2 0.05 0.5 1.0 0.1 1.6

2SA1774 2SA1774Q / 2SA1774R / 2SA1774S SOT-523 Silicon General Purpose Transistor (PNP) General description SOT-523 Silicon General Purpose Transistor (PNP) FEATURES Low Cob = 3.5pF (Typical) Low Vce(sat)

isc Silicon PNP Power Transistor 2SA1773 DESCRIPTION High breakdown voltage V >-400V @I =-1mA (BR)CEO C Large current capacity Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -400 V CBO