2SA1805. Аналоги и основные параметры
Наименование производителя: 2SA1805
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 80 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 30 MHz
Ёмкость коллекторного перехода (Cc): 480 pf
Статический коэффициент передачи тока (hFE): 55
Корпус транзистора: ISO247
Аналоги (замена) для 2SA1805
- подборⓘ биполярного транзистора по параметрам
2SA1805 даташит
..2. Size:211K jmnic
2sa1805.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PFM package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
..3. Size:203K inchange semiconductor
2sa1805.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1805 DESCRIPTION With TO-3PML package Complement to type 2SC4690 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
8.2. Size:89K toshiba
2sa1802.pdf 
2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 200 to 600 (V = -2 V, I = -0.5 A) FE (1) CE C h = 140 (min), 200 (typ.) (V = -2 V, I = -3 A) FE (2) CE C Low collector saturation voltage V = -0.5 V (max) (I = -3 A, I = -60 mA) CE (sat) C B C
8.5. Size:56K rohm
2sa1807 2sa1862.pdf 
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference onl
8.6. Size:43K rohm
2sa1807.pdf 
2SA1807 Transistors Transistors 2SA1862 (96-102-A331) (96-109-A343) 307
8.7. Size:40K panasonic
2sa1806.pdf 
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
8.8. Size:44K panasonic
2sa1806 e.pdf 
Transistor 2SA1806 Silicon PNP epitaxial planer type For high speed switching Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing and the maga- zine packing. 2 Absolute Maximum Ratings (Ta=25 C) Pa
8.9. Size:263K jmnic
2sa1803.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PFM package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING (see Fig.2 ) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute
8.10. Size:243K jmnic
2sa1804.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PFM package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING(See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute ma
8.11. Size:163K inchange semiconductor
2sa1803.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1803 DESCRIPTION With TO-3PML package Complement to type 2SC4688 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
8.12. Size:216K inchange semiconductor
2sa1804.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1804 DESCRIPTION With TO-3PML package Complement to type 2SC4689 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absol
Другие транзисторы: 2SA1802, 2SA1802A, 2SA1803, 2SA1803O, 2SA1803R, 2SA1804, 2SA1804O, 2SA1804R, A940, 2SA1805O, 2SA1805R, 2SA1806, 2SA181, 2SA1810, 2SA1810B, 2SA1810C, 2SA1811
