2SA608KNP - Даташиты. Аналоги. Основные параметры

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1

Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter

2SA608N -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Large current capacity and wide ASO. G H APPLICATIONS Emitter Collector Capable of being used in the low frequency to Base J high frequency range. A D Millimeter REF. B Min.

2SA608 -0.1 A, -40 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Capable of being used in the low frequency to high frequency range. G Large current capacity and wide ASO. H Emitter Collector Base CLASSIFICATION OF hFE J A D Product-Rank 2SA60

2SA608(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Capable of being used in the low frequency to high frequency range. Large current capacity and wide ASO. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V Dimensions in inches and (mil

RoHS 2SA608S 2SA608S TRANSISTOR (PNP) TO-92S FEATURES 1. EMITTER Power dissipation 2. COLLECTOR PCM 300 mW (Tamb=25 ) 3. BASE Collector current ICM -100 mA 123 Collector-base voltage V(BR)CBO -40 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)