2SA638S datasheet и подбор замены

 9.1. Size:47K  no
 2sa634.pdf 

 9.2. Size:109K  jmnic
 2sa633.pdf 

Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors B C E Features With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Jun

 9.3. Size:122K  jmnic
 2sa634.pdf 

Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors B C E Features With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current A IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Ju

 9.4. Size:150K  jmnic
 2sa636 2sa636a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202)

 9.5. Size:137K  inchange semiconductor
 2sa633.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA633 DESCRIPTION With TO-202 package High current capability APPLICATIONS Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

 9.6. Size:146K  inchange semiconductor
 2sa634.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA634 DESCRIPTION With TO-202 package Complement to type 2SC1096 High current capability APPLICATIONS Audio frequency power amplifier Low speed switching PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-202) and symbol 3 Emitter Absolute maximum ratin

 9.7. Size:146K  inchange semiconductor
 2sa636 2sa636a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION With TO-202 package Complement to type 2SC1098/1098A High breakdown voltage High transition frequency APPLICATIONS For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified

 9.8. Size:180K  inchange semiconductor
 2sa635.pdf 

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA635 DESCRIPTION With TO-202 package High current capability Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -6