2SA677 datasheet и подбор замены

 9.1. Size:98K  renesas
 r07ds0430ej 2sa673ak-1.pdf 

Preliminary Datasheet R07DS0430EJ0400 2SA673A(K) (Previous REJ03G0627-0300) Rev.4.00 Silicon PNP Epitaxial Jun 07, 2011 Application Low frequency amplifier Medium speed switching Outline RENESAS Package code PRSS0003DA-A (Package name TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collect

 9.2. Size:82K  renesas
 r07ds0429ej 2sa673 673a-1.pdf 

Preliminary Datasheet R07DS0429EJ0300 2SA673, 2SA673A (Previous REJ03G0626-0200) Rev.3.00 Silicon PNP Epitaxial Jun 07, 2011 Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code PRSS0003DA-A (Package name TO-92 (1)) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25 C) Item S

 9.3. Size:89K  nec
 2sa675.pdf 

DATA SHEET SILICON TRANSISTOR 2SA675 PNP SILICON EPITAXIAL TRANSISTOR FOR DRIVING FLUORESCENT INDICATOR PANNEL The 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING (UNIT mm) dynamic drivers of counting indicator pannel such as fluorescent indicator pannel due to high voltage. High voltage VCBO > -80 V, VCER > -80 V Excellent linearity for current of D

 9.4. Size:31K  hitachi
 2sa673.pdf 

2SA673, 2SA673A Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA673, 2SA673A Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA673 2SA673A Unit Collector to base voltage VCBO 35 50 V Collector to emitter voltage VCEO 35 50 V Emitter to base

 9.5. Size:116K  mospec
 2sa671.pdf 

A A A

 9.6. Size:354K  secos
 2sa673-2sa673a.pdf 

2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SC1213 and 2SC1213A 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA673-B 2SA673-C 2SA673-D Mil

 9.7. Size:428K  jiangsu
 2sa673a.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SA673A TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Low Frequency Amplifier 3. BASE Complementary Pair with 2SC1213A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50

 9.8. Size:185K  jmnic
 2sa679 2sa680.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET

 9.9. Size:159K  jmnic
 2sa671.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 9.10. Size:108K  inchange semiconductor
 2sa670.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Ab

 9.11. Size:199K  inchange semiconductor
 2sa679.pdf 

isc Silicon PNP Power Transistor 2SB679 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -120V(Min.) (BR)CEO Complement to Type 2SC1079 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

 9.12. Size:205K  inchange semiconductor
 2sa671.pdf 

isc Silicon PNP Power Transistor 2SA671 DESCRIPTION Low Collector Saturation Voltage- V = -1.0V(Max)@ I = -2.0A CE(SUS) C DC Current Gain h = 35-320@ I = -0.5A FE C Complement to Type 2SC1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM