Справочник транзисторов. 2SA678

 

Биполярный транзистор 2SA678 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA678
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 125 °C
   Граничная частота коэффициента передачи тока (ft): 70 MHz
   Ёмкость коллекторного перехода (Cc): 10 pf
   Статический коэффициент передачи тока (hfe): 250
   Корпус транзистора: SC71

 Аналоги (замена) для 2SA678

 

 

2SA678 Datasheet (PDF)

 9.1. Size:98K  renesas
r07ds0430ej 2sa673ak-1.pdf

2SA678
2SA678

Preliminary Datasheet R07DS0430EJ04002SA673A(K) (Previous: REJ03G0627-0300)Rev.4.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Medium speed switching Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollect

 9.2. Size:82K  renesas
r07ds0429ej 2sa673 673a-1.pdf

2SA678
2SA678

Preliminary Datasheet R07DS0429EJ03002SA673, 2SA673A (Previous: REJ03G0626-0200)Rev.3.00Silicon PNP Epitaxial Jun 07, 2011Application Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213A Outline RENESAS Package code: PRSS0003DA-A(Package name: TO-92 (1))1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item S

 9.3. Size:89K  nec
2sa675.pdf

2SA678
2SA678

DATA SHEETSILICON TRANSISTOR2SA675PNP SILICON EPITAXIAL TRANSISTORFOR DRIVING FLUORESCENT INDICATOR PANNELThe 2SA675 is a resin sealed mold transistor and is ideal for PACKAGE DRAWING (UNIT: mm)dynamic drivers of counting indicator pannel such as fluorescentindicator pannel due to high voltage. High voltageVCBO > -80 V, VCER > -80 V Excellent linearity for current of D

 9.4. Size:31K  hitachi
2sa673.pdf

2SA678
2SA678

2SA673, 2SA673ASilicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC1213 and 2SC1213AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA673, 2SA673AAbsolute Maximum Ratings (Ta = 25C)Item Symbol 2SA673 2SA673A UnitCollector to base voltage VCBO 35 50 VCollector to emitter voltage VCEO 35 50 VEmitter to base

 9.5. Size:116K  mospec
2sa671.pdf

2SA678
2SA678

AAA

 9.6. Size:354K  secos
2sa673-2sa673a.pdf

2SA678
2SA678

2SA673, 2SA673A PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES TO-92 Low frequency amplifier G H Complementary pair with 2SC1213 and 2SC1213A 1Emitter 1112Collector 222 3Base 333J CLASSIFICATION OF hFE(1) A DProduct-Rank 2SA673-B 2SA673-C 2SA673-D Mil

 9.7. Size:428K  jiangsu
2sa673a.pdf

2SA678
2SA678

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SA673A TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Low Frequency Amplifier 3. BASE Complementary Pair with 2SC1213A MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50

 9.8. Size:185K  jmnic
2sa679 2sa680.pdf

2SA678
2SA678

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

 9.9. Size:159K  jmnic
2sa671.pdf

2SA678
2SA678

JMnic Product Specification Silicon PNP Power Transistors 2SA671 DESCRIPTION With TO-220 package Complement to type 2SC1061 Low collector saturation voltage Note:type 2SA670 with short pin APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 9.10. Size:108K  inchange semiconductor
2sa670.pdf

2SA678
2SA678

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA670 DESCRIPTION With TO-220 package Low collector saturation voltage APPLICATIONS Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAb

 9.11. Size:199K  inchange semiconductor
2sa679.pdf

2SA678
2SA678

isc Silicon PNP Power Transistor 2SB679DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1079Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.12. Size:205K  inchange semiconductor
2sa671.pdf

2SA678
2SA678

isc Silicon PNP Power Transistor 2SA671DESCRIPTIONLow Collector Saturation Voltage-: V = -1.0V(Max)@ I = -2.0ACE(SUS) CDC Current Gain: h = 35-320@ I = -0.5AFE CComplement to Type 2SC1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 

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