Биполярный транзистор 2SA683 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA683
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO92
2SA683 Datasheet (PDF)
2sa683 2sa684.pdf
Transistor2SA683, 2SA684Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1383 and 2SC13845.9 0.2 4.9 0.2FeaturesComplementary pair with 2SC1383 and 2SC1384.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to
2sa683 2sa684 .pdf
Transistor2SA683, 2SA684Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1383 and 2SC13845.9 0.2 4.9 0.2FeaturesComplementary pair with 2SC1383 and 2SC1384.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to
2sa683 3ca683.pdf
2SA683(3CA683) PNP /SILICON PNP TRANSISTOR :/Purpose:AF power amplifier and driver. : 2SC1383(3DA1383)/Features:Complementary pair with 2SC1383(3DA1383). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V EBO I -1.0 A C
st2sa683 st2sa684.pdf
ST 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximu
2sa684.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SA684 is power amplifier and driver. FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA684G-x-AB3-R SOT-89 B C
2sa684.pdf
2SA684 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Automatic insertion by radial taping possible. 1Emitter 1112Collector 222 Complementary pair with 2SC1384L. 3Base 333J A DCLASSIFICATION OF hFE Millimeter REF. Min. Max
2sa679 2sa680.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET
2sa684.pdf
2SA684TO-92L Transistors (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 5.1001Features7.8008.200 Automatic insertion by radial taping possible. 0.6000.800 Complementary pair with 2SC1384. 0.3500.55013.80014.200MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters)1.270 TYP2.440Symbol Parameter 2.640 Va
2sa684 3ca684.pdf
2SA684(3CA684) PNP /SILICON PNP TRANSISTOR : Purpose: AF power amplifier and driver applications. : , 2SC1384(3DA1384) 23 Features: Low V ,23W output in complementary pair with 2SC1384(3DA1384). CE(sat)/Absolute Maximum Ratings(Ta=25)
2sa680.pdf
isc Silicon PNP Power Transistor 2SA680DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1080Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050