2SA683 - Даташиты. Аналоги. Основные параметры

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1383 and 2SC1384 5.9 0.2 4.9 0.2 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to

Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SC1383 and 2SC1384 5.9 0.2 4.9 0.2 Features Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to

2SA683(3CA683) PNP /SILICON PNP TRANSISTOR /Purpose AF power amplifier and driver. 2SC1383(3DA1383) /Features Complementary pair with 2SC1383(3DA1383). /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V EBO I -1.0 A C

ST 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package O Absolute Maximu

UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SA684 is power amplifier and driver. FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA684G-x-AB3-R SOT-89 B C

2SA684 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Automatic insertion by radial taping possible. 1Emitter 1 1 1 2Collector 2 2 2 Complementary pair with 2SC1384L. 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimeter REF. Min. Max

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMET

2SA684 TO-92L Transistors (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 5.100 1 Features 7.800 8.200 Automatic insertion by radial taping possible. 0.600 0.800 Complementary pair with 2SC1384. 0.350 0.550 13.800 14.200 MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters) 1.270 TYP 2.440 Symbol Parameter 2.640 Va

isc Silicon PNP Power Transistor 2SA680 DESCRIPTION High Power Dissipation- PC= 100W(Max.)@T =25 C Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Complement to Type 2SC1080 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 )