Transistor2SA683, 2SA684Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1383 and 2SC13845.9 0.2 4.9 0.2FeaturesComplementary pair with 2SC1383 and 2SC1384.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to

Transistor2SA683, 2SA684Silicon PNP epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SC1383 and 2SC13845.9 0.2 4.9 0.2FeaturesComplementary pair with 2SC1383 and 2SC1384.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)2.54 0.15Parameter Symbol Ratings UnitCollector to

UNISONIC TECHNOLOGIES CO., LTD 2SA684 PNP SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC 2SA684 is power amplifier and driver. FEATURES * Automatic insertion by radial taping possible. * Complementary pair with 2SC1384. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - 2SA684G-x-AB3-R SOT-89 B C

2SA684 -1A , -60V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92L FEATURE G H Automatic insertion by radial taping possible. 1Emitter 1112Collector 222 Complementary pair with 2SC1384L. 3Base 333J A DCLASSIFICATION OF hFE Millimeter REF. Min. Max

2SA684TO-92L Transistors (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 5.1001Features7.8008.200 Automatic insertion by radial taping possible. 0.6000.800 Complementary pair with 2SC1384. 0.3500.55013.80014.200MAXIMUM RATINGS(TA=25 unless otherwise noted) Dimensions in inches and (millimeters)1.270 TYP2.440Symbol Parameter 2.640 Va

2SA684(3CA684) PNP /SILICON PNP TRANSISTOR : Purpose: AF power amplifier and driver applications. : , 2SC1384(3DA1384) 23 Features: Low V ,23W output in complementary pair with 2SC1384(3DA1384). CE(sat)/Absolute Maximum Ratings(Ta=25)

ST 2SA683 / 2SA684 PNP Silicon Epitaxial Planar Transistor for low frequency power amplification and driver amplification The transistor is subdivided into three group, Q, R and S according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base TO-92 Plastic Package OAbsolute Maximu

JMnic Product Specification Silicon PNP Power Transistors 2SA679 2SA680 DESCRIPTION With TO-3 package Complement to type 2SC1079/1080 High power dissipation APPLICATIONS For audio power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMET

2SA683(3CA683) PNP /SILICON PNP TRANSISTOR :/Purpose:AF power amplifier and driver. : 2SC1383(3DA1383)/Features:Complementary pair with 2SC1383(3DA1383). /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -25 V CEO V -5.0 V EBO I -1.0 A C

isc Silicon PNP Power Transistor 2SA680DESCRIPTIONHigh Power Dissipation-: PC= 100W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1080Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)