2SA738 datasheet, аналоги, основные параметры
Наименование производителя: 2SA738 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hFE): 35
Корпус транзистора: TO39
Аналоги (замена) для 2SA738
- подборⓘ биполярного транзистора по параметрам
2SA738 даташит
..1. Size:145K jmnic
2sa738.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA738 DESCRIPTION With TO-126 package High current Complement to type 2SC1368 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDIT
..2. Size:188K inchange semiconductor
2sa738.pdf 
isc Silicon PNP Power Transistor 2SA738 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -25V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC1368 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as driver stages in high-fidelity amplifiers and TV circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
9.1. Size:123K fairchild semi
2sa733.pdf 
September 2009 2SA733 PNP General Purpose Amplifier Features This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. TO-92 1 1. Emitter 2. Collector 3.Base Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volta
9.3. Size:259K utc
2sa733.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SA733 PNP SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA733 is a low frequency amplifier. FEATURES * Collector-emitter voltage BVCEO=-50V * Collector current up to -150mA * High hFE linearity * Complimentary to 2SC945 ORDERING INFORMATION Ordering Number Pin Assignment
9.5. Size:414K secos
2sa733.pdf 
2SA733 -60 V, -150mA PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Complementary of the 2SC945 A Collector to base voltage -60V L 3 3 MARKING Top View C B 1 1 2 Product Marking Code 2 K E 2SA733 CS D H J F G CLASSIFICATION OF hFE Product-Rank 2SA73
9.7. Size:506K blue-rocket-elect
2sa733m.pdf 
2SA733M(BR3CG733M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features h FE High hFE and excellent hFE linearity. / Applications Driver stage of AF power amplifier. / Equivalent Circ
9.8. Size:162K semtech
2sa733r 2sa733o 2sa733y 2sa733p 2sa733l.pdf 
2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor 2SC945 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Collector 3. Base
9.9. Size:706K china
2sa733lt1.pdf 
SEMICONDUCTOR 2SA733LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -60 V Collector-Emitter Voltage Vceo -50 V Emitter-Base Voltage Vebo -5 V PIN 1 2 3 Collector Current Ic -150
9.10. Size:1105K kexin
2sa733.pdf 
SMD Type Trans s o s SMD Type Transiisttorrs PNP Transistors 2SA733 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector-Base Voltage VCBO=-60V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -60 V Collector to emitter voltage VCEO -50 V
9.11. Size:309K galaxy
2sa733.pdf 
Product specification Silicon Epitaxial Planar Transistor 2SA733 FEATURES Pb Excellent h Linearity. FE Lead-free Power dissipation P =250mW. D High h . FE APPLICATIONS Designed for use in driver stage of amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA733 CS SOT-23 none is for Lead Free package; G is f
9.12. Size:258K lzg
2sa733k-p-q-r.pdf 
2SA733(3CG733) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of AF power amplifier. h /Features High h and excellent h linearity. FE FE FE /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -60 V CBO V -50 V CEO V -5.0 V EBO I -150 mA
9.13. Size:572K umw-ic
2sa73l 2sa73h.pdf 
R UMW UMW 2SA73 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) 2SA73 MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complement to C945 Collector-Base Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VE
Другие транзисторы: 2SA726, 2SA728, 2SA728A, 2SA73, 2SA730, 2SA731, 2SA732, 2SA733, 2222A, 2SA739, 2SA74, 2SA740, 2SA740A, 2SA741, 2SA741H, 2SA742, 2SA742H
