Биполярный транзистор 2SA742
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA742
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.58
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 8
pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора:
TO18
Аналоги (замена) для 2SA742
2SA742
Datasheet (PDF)
9.2. Size:31K hitachi
2sa743.pdf 
2SA743, 2SA743ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SC1212 and 2SC1212AOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SA743 2SA743A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEB
9.3. Size:186K jmnic
2sa743 2sa743a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION With TO-126 package Complement to type 2SC1212/1212A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SA743
9.4. Size:147K jmnic
2sa740.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION With TO-220 package Complement to type 2SC1448 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM
9.5. Size:151K jmnic
2sa744 2sa745 2sa745a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION With TO-3 package Complement to type 2SC1402/1403/1403A APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
9.6. Size:147K jmnic
2sa747.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
9.7. Size:147K jmnic
2sa746.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA746 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1115 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
9.8. Size:109K jmnic
2sa748.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA748 DESCRIPTION With TO-220 package Complement to type 2SC1398 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and symbol Absolute maxim
9.9. Size:150K jmnic
2sa747a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME
9.10. Size:194K inchange semiconductor
2sa740.pdf 
isc Silicon PNP Power Transistor 2SA740DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplementary to Type 2SC1448Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T
9.11. Size:190K inchange semiconductor
2sa744.pdf 
isc Silicon PNP Power Transistor 2SA744DESCRIPTIONHigh Power Dissipation-: PC= 70W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC1402Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
9.12. Size:196K inchange semiconductor
2sa747.pdf 
isc Silicon PNP Power Transistor 2SA747DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
9.13. Size:190K inchange semiconductor
2sa745a.pdf 
isc Silicon PNP Power Transistor 2SA745ADESCRIPTIONHigh Power Dissipation-: PC= 70W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1403AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
9.14. Size:188K inchange semiconductor
2sa746.pdf 
isc Silicon PNP Power Transistor 2SA746DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC1115Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
9.15. Size:198K inchange semiconductor
2sa743.pdf 
isc Silicon PNP Power Transistor 2SA743DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOComplement to Type 2SC1212Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA
9.16. Size:198K inchange semiconductor
2sa743a.pdf 
isc Silicon PNP Power Transistor 2SA743ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -80V (Min)(BR)CEOComplement to Type 2SC1212AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PA
9.17. Size:69K inchange semiconductor
2sa745.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA745 DESCRIPTION High Power Dissipation- : PC= 70W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Complement to Type 2SC1403 APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col
9.18. Size:210K inchange semiconductor
2sa748.pdf 
isc Silicon PNP Power Transistor 2SA748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLarge Power Dissipation-: P = 15W@ T = 25C CComplement to Type 2SC1398Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
9.19. Size:190K inchange semiconductor
2sa747a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=
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