Биполярный транзистор 2SA748 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA748
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 160 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO202
2SA748 Datasheet (PDF)
2sa748.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA748 DESCRIPTION With TO-220 package Complement to type 2SC1398 Large collector power dissipation APPLICATIONS For medium power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-220) and symbol Absolute maxim
2sa748.pdf
isc Silicon PNP Power Transistor 2SA748DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLarge Power Dissipation-: P = 15W@ T = 25C CComplement to Type 2SC1398Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SY
2sa743.pdf
2SA743, 2SA743ASilicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SC1212 and 2SC1212AOutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SA743 2SA743A UnitCollector to base voltage VCBO 50 80 VCollector to emitter voltage VCEO 50 80 VEmitter to base voltage VEB
2sa743 2sa743a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA743 2SA743A DESCRIPTION With TO-126 package Complement to type 2SC1212/1212A APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SA743
2sa740.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA740 DESCRIPTION With TO-220 package Complement to type 2SC1448 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYM
2sa744 2sa745 2sa745a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA744/745/745A DESCRIPTION With TO-3 package Complement to type 2SC1402/1403/1403A APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER
2sa747.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA747 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
2sa746.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA746 DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1115 APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
2sa747a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAME
2sa740.pdf
isc Silicon PNP Power Transistor 2SA740DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -150V(Min)(BR)CEODC Current Gain: h = 40-140@ I = -0.5AFE CComplementary to Type 2SC1448Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T
2sa744.pdf
isc Silicon PNP Power Transistor 2SA744DESCRIPTIONHigh Power Dissipation-: PC= 70W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC1402Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sa747.pdf
isc Silicon PNP Power Transistor 2SA747DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1116Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
2sa745a.pdf
isc Silicon PNP Power Transistor 2SA745ADESCRIPTIONHigh Power Dissipation-: PC= 70W(Max.)@T =25CCollector-Emitter Breakdown Voltage-: V = -120V(Min.)(BR)CEOComplement to Type 2SC1403AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sa746.pdf
isc Silicon PNP Power Transistor 2SA746DESCRIPTIONHigh Power Dissipation-: P = 100W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -80V(Min.)(BR)CEOComplement to Type 2SC1115Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sa743.pdf
isc Silicon PNP Power Transistor 2SA743DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -50V (Min)(BR)CEOComplement to Type 2SC1212Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARA
2sa743a.pdf
isc Silicon PNP Power Transistor 2SA743ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -80V (Min)(BR)CEOComplement to Type 2SC1212AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PA
2sa745.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA745 DESCRIPTION High Power Dissipation- : PC= 70W(Max.)@TC=25 Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) Complement to Type 2SC1403 APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Col
2sa747a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION With TO-3 package Wide area of safe operation Complement to type 2SC1116A APPLICATIONS For audio and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050