Биполярный транзистор 2SA76 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA76
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.055 W
Макcимально допустимое напряжение коллектор-база (Ucb): 18 V
Макcимальный постоянный ток коллектора (Ic): 0.005 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO44
2SA76 Datasheet (PDF)
2sa769.pdf
2SA769 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25 PC 30 W Jun
2sa766.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION With TO-66 package High power dissipation Complement to type 2SC1450 APPLICATIONS Line-operated vertical deflection output Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=
2sa768.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SA768 DESCRIPTION With TO-220 package Complement to type 2SC1826 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
2sa765.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION With TO-66 package Low collector saturation voltage APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER C
2sa769.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION With TO-220 package Complement to type 2SC1827 APPLICATIONS For low frequency power amplifier applicattions PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETE
2sa764.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION With TO-66 package Low collector saturation voltage Complement to type 2SC1444 APPLICATIONS Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol 3 CollectorAbsolute maximum ratin
2sa766.pdf
isc Silicon PNP Power Transistor 2SA766DESCRIPTIONCollector-Base Breakdown Voltage-: V = -150V(Min)(BR)CBOHigh Collector Power Dissipation-Complement to Type 2SC1450Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLine-operated vertical deflection outputMedium power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sa768.pdf
isc Silicon PNP Power Transistor 2SA768DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa765.pdf
isc Silicon PNP Power Transistor 2SA765DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1445Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA
2sa762.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA762DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -110V(Min)(BR)CEOLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET
2sa769.pdf
isc Silicon PNP Power Transistor 2SA769DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1827Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa764.pdf
isc Silicon PNP Power Transistor 2SA764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 4ACE(sat) CComplement to Type 2SC1444Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier applicationsABSOLUTE MA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050