2SA777 - описание и поиск аналогов

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

Transistor 2SA777 Silicon PNP epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SC1509 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Abs

JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND

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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy

isc Silicon PNP Power Transistor 2SA771 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80(V)(Min.) (BR)CEO Complement to Type 2SC1986 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA779 DESCRIPTION DC Current Gain- h = 40(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -35V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complementa

isc Silicon PNP Power Transistor 2SA770 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60(V)(Min.) (BR)CEO Complement to Type 2SC1985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

isc Silicon PNP Power Transistor 2SA775 DESCRIPTION Collector-Emitter Breakdown Voltage V = -100V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V