Биполярный транзистор 2SA778 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA778
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50(typ) MHz
Ёмкость коллекторного перехода (Cc): 10(max) pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO92
2SA778 Datasheet (PDF)
2sa778.pdf
2SA778(K), 2SA778A(K)Silicon PNP EpitaxialApplicationHigh voltage medium speed switchingOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA778(K), 2SA778A(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA778(K) 2SA778A(K) UnitCollector to base voltage VCBO 150 180 VCollector to emitter voltage VCEO 150 180 VEmitter to base voltage VEBO 5
2sa777.pdf
Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sa777 e.pdf
Transistor2SA777Silicon PNP epitaxial planer typeFor low-frequency driver amplificationUnit: mmComplementary to 2SC15095.9 0.2 4.9 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver stage of a low-frequency and 25 to 30Woutput amplifier.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base vo
2sa770 2sa771.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbs
2sa775.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA775 DESCRIPTION With TO-220 package High breakdown voltage APPLICATIONS For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
2sa770 2sa771.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sa770 2sa771.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA770 2SA771 DESCRIPTION With TO-220 package Complement to type 2SC1985/1986 Low collector saturation voltage APPLICATIONS For general and industrial purpose applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sy
2sa771.pdf
isc Silicon PNP Power Transistor 2SA771DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -80(V)(Min.)(BR)CEOComplement to Type 2SC1986Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa779.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA779DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = -0.15AFE CCollector-Emitter Sustaining Voltage -: V = -35V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementa
2sa770.pdf
isc Silicon PNP Power Transistor 2SA770DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -60(V)(Min.)(BR)CEOComplement to Type 2SC1985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol
2sa775.pdf
isc Silicon PNP Power Transistor 2SA775DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -100V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050