Биполярный транзистор 2SA794A - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA794A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Статический коэффициент передачи тока (hfe): 65
Корпус транзистора: TO126
2SA794A Datasheet (PDF)
2sa794 2sa794a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEO APPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
2sa794 2sa794a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA794 2SA794A DESCRIPTION With TO-126 package Complement to type 2SC1567/1567A High collector-emitter voltage VCEOAPPLICATIONS For low frequency output driver Optimum for the driver stage of low frequency and 40W to 100W output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;
2sa794a.pdf
isc Product Specificationisc Silicon PNP Power Transistor 2SA794ADESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1567AMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of l
2sa794.pdf
Power Transistors2SA0794 (2SA794), 2SA0794A (2SA794A)Silicon PNP epitaxial planar typeFor low-frequency output driverUnit: mm8.0+0.50.13.20.2Complementary to 2SC1567, 2SC1567A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requi
2sa795.pdf
isc Silicon PNP Power Transistor 2SA795DESCRIPTIONLarge Collector Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1565Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium Power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050