2SA817A TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features 8.4008.800 Complementary to 2SC1627A. 0.9001.100 Driver Stage Application of 30 to 0.4000.60035 Watts Amplifiers. 13.80014.2001.500 TYP2.900 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.1000.000 1.600

2SA817 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA817 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC1627. Suitable for driver of 20~25 watts audio amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -80 VCollector-emitter voltage VCEO -80 VEmitter-base voltage VEB

INCHANGE Semiconductor isc Product Specificationisc Silicon PNP Power Transistor 2SA818DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC1628APPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

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2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V PACKAGE DIMENSIONS SOT-23Collector3Dim Min MaxA 2.800 3.0401BaseB 1.200 1.400

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 TRANSISTOR (PNP) 1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO

JMnic Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION With TO-220 package Complement to type 2SC1624/1625 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and sym

2SA8 1 2SOT-23 TRANSISTOR(PNP)1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM812MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-C

2SA812SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V

2SA812PNP General Purpose Transistors3P b Lead(Pb)-Free12SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBOCollector-Base Voltage -60 VCollector-Emitter VoltageVCEO-50 VVEBOEmitter-Base Voltage -6 VICCollector Current - Continuous -150 mATotal Device Dissipation FR-5 Board,PD200 mWT =25CADerate above 25C mW/C1.8Thermal Resistance,

FM120-M WILLAS2SA812xLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low prFEATUREofile surface mounted application in order to o

2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 Complementary pair with 2SC1623. / Applications Audio frequency amplifier application. / Equivalent Circuit / Pinning

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsFEATURE L2SA812QLT1G Series High Voltage: VCEO = -50 V.S-L2SA812QLT1G Series Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SA812QLT1G SeriesFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie

LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu

LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu

LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu

SMD TypeSMD Type TransistorsPNP Transistors2SA812SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesHigh DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)1 2High Voltage: VCEO = -50 V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO

SMD Type TransistorsPNP Transistors2SA811ASOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-120V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Co

Product specification Silicon Epitaxial Planar Transistor 2SA812 FEATURES Pb Commplementary to 2SC1623. Lead-free High DC current gain:h =200typ. FE(V =-6.0V,I =-1.0mA) CE C High Voltage: V =-50V. CEOAPPLICATIONS Audio frequency, general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA812 M4/M5/M6/M7 SOT-23

2SA812SOT-23 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (PNP) 1. BASE Unit : mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Volta

2SA812SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) MARKING:M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -50 V VCEO Collector-Emitter Voltage - -45 V VEBO Emitter-Base Voltage

2SA812 TRANSISTOR (PNP)SOT323 FEATURES Small Surface Mount Package High DC Current GainMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASEV Collector-Base Voltage -50 V CBO2. EMITTERV Collector-Emitter Voltage -45 V CEO3. COLLECTORV Emitter-Base Voltage -5 V EBOIC Collector Current -100 mA P Collector Power Dissipat

RoHS RoHSCOMPLIANT COMPLIANT 2SA812 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, solderable per

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD2SA812MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO -50 Vdc-Collector-Base VoltageVCBO -60 Vdc-Emitter-Base VoltageVEBO -5.0 Vdc-Co

2SA812BIPOLAR TRANSISTOR (PNP)FEATURES High DC current gain :h =200(Typ) V = -6V,I = -1mAFE CE C High voltage:V = -50VCEO Surface Mount device Complementary to 2SC1623SOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unles

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA814 2SA815 DESCRIPTION With TO-220 package Complement to type 2SC1624/1625 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline

isc Silicon PNP Power Transistor 2SA814DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -120(V)(Min.)(BR)CEOComplement to Type 2SC1624Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistor 2SA815DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = -100(V)(Min.)(BR)CEOComplement to Type 2SC1625Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U