2SA901. Аналоги и основные параметры
Наименование производителя: 2SA901
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hFE): 250
Корпус транзистора: TO92
Аналоги (замена) для 2SA901
- подборⓘ биполярного транзистора по параметрам
2SA901 даташит
9.4. Size:154K jmnic
2sa900.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U
9.5. Size:148K jmnic
2sa907 2sa908 2sa909.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CO
9.6. Size:217K inchange semiconductor
2sa900.pdf 
isc Silicon PNP Power Transistor 2SA900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -18V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Complement to Type 2SC1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATI
9.7. Size:195K inchange semiconductor
2sa907 2sa908 2sa909.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SY
9.8. Size:194K inchange semiconductor
2sa908.pdf 
isc Silicon PNP Power Transistor 2SA908 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Complement to Type 2SC1585 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(
9.9. Size:194K inchange semiconductor
2sa907.pdf 
isc Silicon PNP Power Transistor 2SA907 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -100V(Min.) (BR)CEO Complement to Type 2SC1584 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(
9.10. Size:194K inchange semiconductor
2sa909.pdf 
isc Silicon PNP Power Transistor 2SA909 DESCRIPTION High Power Dissipation- P = 150W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = -200V(Min.) (BR)CEO Complement to Type 2SC1586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(
Другие транзисторы: 2SA896, 2SA896-1, 2SA896-2, 2SA897, 2SA898, 2SA899, 2SA90, 2SA900, 13009, 2SA902, 2SA903, 2SA904, 2SA904A, 2SA905, 2SA906, 2SA907, 2SA908
