Биполярный транзистор 2SA908 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA908
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 150 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO3
2SA908 Datasheet (PDF)
2sa907 2sa908 2sa909.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CO
2sa907 2sa908 2sa909.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA907/908/909 DESCRIPTION With TO-3 package Complement to type 2SC1584/1585/1586 APPLICATIONS For power switching and general purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SY
2sa908.pdf
isc Silicon PNP Power Transistor 2SA908DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOComplement to Type 2SC1585Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
2sa900.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION With TO-126 package Complement to type 2SC1568 Low collector saturation voltage APPLICATIONS For audio frequency power amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute Maximun Ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U
2sa900.pdf
isc Silicon PNP Power Transistor 2SA900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -18V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageComplement to Type 2SC1568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATI
2sa907.pdf
isc Silicon PNP Power Transistor 2SA907DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOComplement to Type 2SC1584Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
2sa909.pdf
isc Silicon PNP Power Transistor 2SA909DESCRIPTIONHigh Power Dissipation-: P = 150W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = -200V(Min.)(BR)CEOComplement to Type 2SC1586Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier and general purpose applications.ABSOLUTE MAXIMUM RATINGS(
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SD1801S
