2SA919. Аналоги и основные параметры
Наименование производителя: 2SA919
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.95 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 9 MHz
Ёмкость коллекторного перехода (Cc): 40 pf
Статический коэффициент передачи тока (hFE): 70
Корпус транзистора: TO202
Аналоги (замена) для 2SA919
- подборⓘ биполярного транзистора по параметрам
2SA919 даташит
9.5. Size:105K jmnic
2sa914.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CON
9.6. Size:125K jmnic
2sa913 2sa913a.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and sy
9.7. Size:177K inchange semiconductor
2sa914.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION With TO-126 package Complement to type 2SC1953 Good linearity of hFE High VCEO APPLICATIONS For audio frequency power pre-amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAM
9.8. Size:205K inchange semiconductor
2sa913.pdf 
isc Silicon PNP Power Transistor 2SA913 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Complement to Type 2SC1913 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF high power dirver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -1
9.9. Size:139K inchange semiconductor
2sa913 2sa913a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA913 2SA913A DESCRIPTION With TO-220 package Complement to type 2SC1913/1913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and s
Другие транзисторы: 2SA912, 2SA913, 2SA913A, 2SA914, 2SA915, 2SA916, 2SA917, 2SA918, 2SA1837, 2SA92, 2SA920, 2SA921, 2SA922, 2SA922-1, 2SA922-2, 2SA922S, 2SA923
