2SA935. Аналоги и основные параметры
Наименование производителя: 2SA935
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.7 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 14 pf
Статический коэффициент передачи тока (hFE): 80
Корпус транзистора: TO92
Аналоги (замена) для 2SA935
- подборⓘ биполярного транзистора по параметрам
2SA935 даташит
..1. Size:116K transys
2sa935.pdf 

Transys Electronics L I M I T E D TO-92L Plastic-Encapsulated Transistors TO-92L 2SA935 TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM 0.75 W (Tamb=25 ) 3. BASE Collector current ICM -0.7 A Collector-base voltage V(BR)CBO -80 V 1 2 3 Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTR
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2sa937.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.4. Size:125K 1
2sa937m.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.5. Size:100K rohm
2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf 

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_
9.6. Size:168K rohm
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf 

General Purpose Transistor ( 50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dime
9.7. Size:555K jiangsu
2sa933as.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 2SA933AS TRANSISTOR (PNP) 1. EMITTER FEATURES 2. COLLECTOR Excellent hFE Linearity 3. BASE Equivalent Circuit A933AS A933AS=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Packa
9.8. Size:171K lge
2sa933as.pdf 

2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300
9.9. Size:487K blue-rocket-elect
2sa933a.pdf 

2SA933A(BR3CG933AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SC1740(BR3DG1740K) Excellent hFE linearity, complementary pair with 2SC1740(BR3DG1740K). / Applications General purpose applications.
9.10. Size:118K wej
2sa933as.pdf 

RoHS 2SA933AS 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM 0.2 W (Tamb=25 ) Collector current 123 I CM -0.15 A Collector-base voltage V(BR)CBO -60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specif
Другие транзисторы: 2SA930G, 2SA930H, 2SA931, 2SA932, 2SA933, 2SA933LN, 2SA933S, 2SA934, 2SC2240, 2SA936, 2SA937, 2SA937LN, 2SA937M, 2SA937MLN, 2SA938, 2SA939, 2SA94