Биполярный транзистор 2SA937M - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA937M
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 140(typ) MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 82
Корпус транзистора: ATR
2SA937M Datasheet (PDF)
2sa937m.pdf
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2sa937.pdf
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2sa1037ak 2sa1576a 2sa1774 2sa933as.pdf
TransistorsGeneral Purpose Transistor(*50V, *0.15A)2SA1037AK / 2SA1576A / 2SA1774 / 2SA933ASFFeatures FExternal dimensions (Units: mm)1) Excellent hFE linearity.2) Complements the 2SC2412K /2SC4081 / 2SC4617 / 2SC1740S.FStructureEpitaxial planar typePNP silicon transistor(96-89-A32)198Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933ASFAbsolute maximum ratings (Ta = 25_
2sa1037ak 2sa1576a 2sa1774 2sa2029 2sa933as.pdf
General Purpose Transistor (50V, 0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS Features Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.251.62.1Structure 2.8Epitaxial planar type. PNP silicon transistor 0.1 to 0.40.3 to 0.6Each lead has same dime
2sa933as.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO-92S 2SA933AS TRANSISTOR (PNP)1. EMITTER FEATURES 2. COLLECTORExcellent hFE Linearity3. BASE Equivalent Circuit A933ASA933AS=Device code Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFORMATION Part Number Packa
2sa935.pdf
Transys ElectronicsL I M I T E D TO-92L Plastic-Encapsulated TransistorsTO-92L 2SA935 TRANSISTOR (PNP) 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM : 0.75 W (Tamb=25) 3. BASE Collector current ICM : -0.7 A Collector-base voltage V(BR)CBO : -80 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTR
2sa933as.pdf
2SA933AS TO-92S Transistor (PNP) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Excellent hFE linearity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300
2sa933a.pdf
2SA933A(BR3CG933AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 PNP Silicon PNP transistor in a TO-92 Plastic Package. / Features 2SC1740(BR3DG1740K) Excellent hFE linearity, complementary pair with 2SC1740(BR3DG1740K). / Applications General purpose applications.
2sa933as.pdf
RoHS 2SA933AS 2SA933AS TRANSISTOR (PNP) TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation 3. BASE PCM : 0.2 W (Tamb=25) Collector current 123 I CM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specif
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050