2SB1012(K)Silicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD1376(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base15 k 1 k23(Typ) (Typ)12SB1012(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation: P = 25 W (Tc = 25C) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

Power Transistors2SB1011Silicon PNP triple diffusion planar typeFor low-frequency output amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB1017L-

2SB1016 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

isc Silicon PNP Power Transistor 2SB1015DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7 V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1406Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SB1017DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1408Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifie

isc Silicon PNP Power Transistor 2SB1016DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0 V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1407Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SB1018DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon PNP Power Transistor 2SB1019DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1412Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SB1018ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATING