JMnic Product Specification Silicon PNP Power Transistors 2SB1019 DESCRIPTION With TO-220Fa package Low saturation voltage Complement to type 2SD1412 APPLICATIONS High current switching applications Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol 3 EmitterAbsolute maximum ratings(Ta=25

isc Silicon PNP Power Transistor 2SB1019DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1412Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1015A Audio Frequency Power Amplifier Applications Unit: mm Low collector saturation voltage: VCE (sat) = -1.7 V (max) (I = -3 A, I = -0.3 A) C B Collector power dissipation: P = 25 W (Tc = 25C) CMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

Power Transistors2SB1011Silicon PNP triple diffusion planar typeFor low-frequency output amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-base voltage (Emitter open) VCBO High collector-emitter voltage (Base open) VCEO Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Absolute Maximu

UNISONIC TECHNOLOGIES CO., LTD 2SB1017 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB1017L-

2SB1012(K)Silicon PNP EpitaxialApplicationLow frequency power amplifier complementary pair with 2SD1376(K)OutlineTO-126 MOD231. EmitterID2. Collector3. Base15 k 1 k23(Typ) (Typ)12SB1012(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base

2SB1016 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SD1407ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

JMnic Product Specification Silicon PNP Power Transistors 2SB1015 DESCRIPTION With TO-220Fa package Collector power dissipation :PC=25W@TC=25 Low collector saturation voltage Complement to type 2SD1406 APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25)

JMnic Product Specification Silicon PNP Power Transistors 2SB1017 DESCRIPTION With TO-220Fa package Complement to type 2SD1408 APPLICATIONS For power amplifications Recommended for 20-25W high-fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VAL

JMnic Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION With TO-220Fa package High breakdown voltage Low collector saturation voltage Complement to type 2SD1407 APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

JMnic Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION With TO-220F package High collector current Low collector saturation voltage Complement to type 2SD1411 APPLICATIONS Power amplifier applications High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Base

isc Silicon PNP Power Transistor 2SB1015DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7 V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1406Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SB1017DESCRIPTIONLow Collector Saturation Voltage-: V = -1.7V(Max)@I = -3ACE(sat) CGood Linearity of hFEComplement to Type 2SD1408Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.Recommended for 20~25W high-fidelity audio frequencyamplifie

isc Silicon PNP Power Transistor 2SB1016DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0 V(Max)@I = -4ACE(sat) CGood Linearity of hFEComplement to Type 2SD1407Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc Silicon PNP Power Transistor 2SB1018DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon PNP Power Transistor 2SB1018ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -4ACE(sat) CHigh Current Capability- I = -7ACComplement to Type 2SD1411AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applications.Power amplifier applications.ABSOLUTE MAXIMUM RATING