2SB1028 - описание и поиск аналогов

2SB1028 Silicon PNP Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1028 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collecto

SMD Type Transistors PNP Transistors 2SB1028 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-160V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter - Base Vol

2SB1020A TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power) 2SB1020A High-Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (VCE = -3 V, IC = -3 A) Low saturation voltage VCE (sat) = -1.5 V (max) (IC = -3 A) Complementary to 2SD1415A Absolute Maximum Ratings (Tc = 25 C)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SB1025 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1418 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1025 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V

2SB1027 Silicon PNP Epitaxial Application Low frequency amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1027 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Collector current IC 1.5 A Collector peak

2SB1026 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1419 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SB1026 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V

JMnic Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1414 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1023 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1413 APPLICATIONS Power amplifier and switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbo

JMnic Product Specification Silicon PNP Power Transistors 2SB1022 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1417 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1021 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1416 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi

JMnic Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION With TO-220Fa package High DC current gain Low saturation voltage Complement to type 2SD1415 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emi

SMD Type Transistors PNP Transistors 2SB1025 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1418 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -80 V Emitter - Base Voltage VEBO -5 Collector Current - Cont

SMD Type Transistors PNP Transistors 2SB1027 Features 1.70 0.1 Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1.5 A Collector

SMD Type Transistors PNP Transistors 2SB1026 Features 1.70 0.1 Low frequency power amplifier Complementary to 2SD1419 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter - Base Voltage VEBO -5 Collector Current - Con

isc Silicon PNP Darlington Power Transistor 2SB1024 DESCRIPTION Low Collector Saturation Voltage- V = -1.5V(Max.)@ I = -3A CE(sat) C High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -1A) FE CE C Complement to Type 2SD1414 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUT

isc Silicon PNP Darlingtion Power Transistor 2SB1023 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -1A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1413 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications. Hammer driv

isc Silicon PNP Darlingtion Power Transistor 2SB1022 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1417 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.

isc Silicon PNP Darlingtion Power Transistor 2SB1021 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1416 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.

isc Silicon PNP Darlingtion Power Transistor 2SB1020 DESCRIPTION High DC C urrent Gain- h = 2000(Min.)@I = -3A FE C Low Collector Saturation Voltage- V = -1.5V(Max)@I = -3A CE(sat) C Good Linearity of h FE Complement to Type 2SD1415 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications.