2SB103 - описание и поиск аналогов

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co

Ordering number EN1256C PNP/NPN Planar Silicon Transistors 2SB1037/2SD1459 Color TV Vertical Output, Sound Output Applications Features Package Dimensions High allowable collector dissipation (PC=2W). unit mm Wide ASO. 2010C [2SB1037/2SD1459] JEDEC TO-220AB 1 Base ( ) 2SB1037 EIAJ SC-46 2 Collector 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SD1423 and 2SD1423A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SB1030 30 VCBO V 1 2 3 base voltage 2SB1030A 60 Co

Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag

Transistor 2SB1036 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V 1.27 1.27 Collector to emitter voltag

2SB1032(K) Silicon PNP Triple Diffused Application Power switching complementary pair with 2SD1436(K) Outline TO-3P 2 1 1. Base ID 2. Collector (Flange) 3. Emitter 1.0 k 200 (Typ) (Typ) 1 3 2 3 2SB1032(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base

2SB1033 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju

JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PA

isc Silicon PNP Power Transistor 2SB1033 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1437 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA

isc Silicon PNP Power Transistor 2SB1038 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1310 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MA

isc Silicon PNP Darlington Power Transistor 2SB1034 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -1A FE C Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = -1.5V(Max)@ I = -1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general

isc Silicon PNP Darlington Power Transistor 2SB1032 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) (BR)CEO Complement to Type 2SD1436 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMU

isc Silicon PNP Power Transistor 2SB1037 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V(Min.) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1459 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical output, sound output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

isc Silicon PNP Darlington Power Transistor 2SB1031 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -8A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1435 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIM