Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

Ordering number:EN1256C PNP/NPN Planar Silicon Transistors2SB1037/2SD1459Color TV Vertical Output, Sound OutputApplicationsFeatures Package Dimensions High allowable collector dissipation (PC=2W).unit:mm Wide ASO.2010C[2SB1037/2SD1459]JEDEC : TO-220AB 1 : Base( ) : 2SB1037EIAJ : SC-46 2 : Collector3 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25

Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

Transistor2SB1030, 2SB1030ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SD1423 and 2SD1423A4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitmarkingCollector to 2SB1030 30VCBO V1 2 3base voltage 2SB1030A 60Co

Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag

Transistor2SB1036Silicon PNP epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm4.0 0.2FeaturesOptimum for high-density mounting.Allowing supply with the radial taping.Low noise voltage NV.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 120 V1.27 1.27Collector to emitter voltag

2SB1032(K)Silicon PNP Triple DiffusedApplicationPower switching complementary pair with 2SD1436(K)OutlineTO-3P211. BaseID2. Collector(Flange)3. Emitter 1.0 k 200 (Typ) (Typ)13232SB1032(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base

2SB1033 PNP EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SD1437ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 40 W Ju

JMnic Product Specification Silicon PNP Power Transistors 2SB1033 DESCRIPTION With TO-220 package Complement to type 2SD1437 APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMET

JMnic Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS V

JMnic Product Specification Silicon NPN Power Transistors 2SB1037 DESCRIPTION With TO-220 package High allowable collector dissipation. Complement to type 2SD1459 APPLICATIONS For color TV vertical output, sound output applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PA

isc Silicon PNP Power Transistor 2SB1033DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1437Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

isc Silicon PNP Power Transistor 2SB1038DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1310Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MA

isc Silicon PNP Darlington Power Transistor 2SB1034DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@ I = -1AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = -1.5V(Max)@ I = -1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general

isc Silicon PNP Darlington Power Transistor 2SB1032DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)(BR)CEOComplement to Type 2SD1436Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMU

isc Silicon PNP Power Transistor 2SB1037DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min.)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1459Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV vertical output, sound outputapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc Silicon PNP Darlington Power Transistor 2SB1031DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -8AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type 2SD1435Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIM