2SB1052 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

isc Silicon PNP Power Transistor 2SB1052 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -2A CE(sat) C Good Linearity of h FE Complement to Type 2SD1480 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolut

Power Transistors 2SB1054 Silicon PNP triple diffusion planar type For high power amplification Unit mm 15.0 0.3 5.0 0.2 Complementary to 2SD1485 11.0 0.2 (3.2) Features 3.2 0.1 Excellent collector current IC characteristics of forward current transfer ratio hFE Wide safe operation area High transition frequency fT 2.0 0.2 2.0 0.1 Full-pack package wh

Transistor 2SB1050 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolut

2SB1059 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD1490 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB1059 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 70 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6 V Collector current IC

JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1057 DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1056 DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

JMnic Product Specification Silicon PNP Power Transistors 2SB1055 DESCRIPTION With TO-3PFa package Complement to type 2SD1486 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDIT

isc Silicon PNP Power Transistor 2SB1054 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Max)@I = -3A CE(sat) C Wide Area of Safe Operation Complement to Type 2SD1485 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN