Биполярный транзистор 2SB1057 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1057
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 130 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 9 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO126
2SB1057 Datasheet (PDF)
2sb1057.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1057 DESCRIPTION With TO-3PFa package Complement to type 2SD1488 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
2sb1050.pdf
Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut
2sb1054.pdf
Power Transistors2SB1054Silicon PNP triple diffusion planar typeFor high power amplificationUnit: mm15.00.3 5.00.2Complementary to 2SD148511.00.2 (3.2) Features 3.20.1 Excellent collector current IC characteristics of forward currenttransfer ratio hFE Wide safe operation area High transition frequency fT 2.00.2 2.00.1 Full-pack package wh
2sb1050 e.pdf
Transistor2SB1050Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Low collector to emitter saturation voltage VCE(sat).Large collector current IC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolut
2sb1059.pdf
2SB1059Silicon PNP EpitaxialApplication Low frequency power amplifier Complementary pair with 2SD1490OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SB1059Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 70 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 6 VCollector current IC
2sb1052.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1052 DESCRIPTION With TO-220Fa package Complement to type 2SD1480 Low collector saturation voltage APPLICATIONS For power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage
2sb1054.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1054 DESCRIPTION With TO-3PFa package Complement to type 2SD1485 High transition frequency Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sb1056.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1056 DESCRIPTION With TO-3PFa package Complement to type 2SD1487 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
2sb1055.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1055 DESCRIPTION With TO-3PFa package Complement to type 2SD1486 High fT Satisfactory linearity of hFE Wide area of safe operation APPLICATIONS For high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT
2sb1052.pdf
isc Silicon PNP Power Transistor 2SB1052DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -2ACE(sat) CGood Linearity of hFEComplement to Type 2SD1480Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
2sb1054.pdf
isc Silicon PNP Power Transistor 2SB1054DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Max)@I = -3ACE(sat) CWide Area of Safe OperationComplement to Type 2SD1485Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050