2SB1073 - описание и поиск аналогов

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

Transistor 2SB1073 Silicon PNP epitaxial planer type For low-frequency amplification Unit mm 1.5 0.1 4.5 0.1 Features 1.6 0.2 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 45 Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. 0.4 0.08 0.4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value Unit VCBO -30 V Collector-Base V

2SB1 07 3 TRANSISTOR FEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -30 V Collector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

2SB1073 SOT-89 Transistor(PNP) 1. BASE 2. COLLECTOR SOT-89 1 4.6 B 4.4 2 1.6 3. EMITTER 1.8 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Low collector-emitter saturation voltage VCE(sat) 0.8 MIN 0.53 Large peak collector current IC 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0 Dimensions in inches and (mil

FM120-M WILLAS THRU 2SB1073 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers TRANSISTOR r reverse leakage current and thermal resistance. (PNP) bette SOD-123H SOT-89 Lo FEATURES w profile s

SMD Type Transistors PNP Transistors 2SB1073 Features 1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE

MCC Micro Commercial Components TM 2SB1073-Q 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SB1073-R Phone (818) 701-4933 Fax (818) 701-4939 Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

Power Transistors 2SB1071, 2SB1071A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector-emitter saturation voltage VCE(sat) 3.1 0.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings TC = 25 C 1.3 0.2 1.4 0.1 Pa

Power Transistors 2SB1070, 2SB1070A Silicon PNP epitaxial planar type For low-voltage switching Unit mm 8.5 0.2 3.4 0.3 6.0 0.2 1.0 0.1 Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the 0 to 0.4 printed circuit board, etc. of small electronic equipment R = 0.5 0.

2SB1078(K) PCB 24 2SB1078(K) Silicon PNP Epitaxial Application Low frequency power amplifier Outline Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Collector

2SB1079 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary pair with 2SD1559 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 k 400 (Typ) (Typ) 1 3 2 3 2SB1079 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base

2SB1072(L), 2SB1072(S) Silicon PNP Triple Diffused Application Medium speed power amplifier Outline DPAK 4 2, 4 4 1 1 2 ID 1. Base 3 2. Collector 3. Emitter S Type 12 3 k 0.4 k 4. Collector 3 (Typ) (Typ) L Type 3 2SB1072(L), 2SB1072(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter volt

JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SB1071 -40 VCBO C

SMD Type Transistors PNP Transistors 2SB1070A TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratin

SMD Type Transistors PNP Transistors 2SB1070 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching. 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

isc Silicon PNP Power Transistor 2SB1075 DESCRIPTION High Collector Current -I = -2A C Collector-Emitter Breakdown Voltage- V = -40V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage V = -1.0V(Max.)@ I = -3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier

isc Silicon PNP Power Transistor 2SB1071 DESCRIPTION Low Collector Saturation Voltage- V = -0.5V(Max)@I = -2A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1077 DESCRIPTION Silicon NPN triple diffused Low Collector-Emitter Saturation Voltage Complement to Type 2SD1558 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER V

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2S

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1079 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -10A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Complement to Type 2SD1559 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier appl