2SB1079Silicon PNP Triple DiffusedApplicationLow frequency power amplifier complementary pair with 2SD1559OutlineTO-3P211. Base2. Collector(Flange)3. Emitter 1 k 400 (Typ) (Typ)13232SB1079Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 100 VCollector to emitter voltage VCEO 100 VEmitter to base

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1079DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Complement to Type 2SD1559Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier appl

MCCMicro Commercial ComponentsTM 2SB1073-Q20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SB1073-RPhone: (818) 701-4933Fax: (818) 701-4939Features Low collector to emitter saturation voltage VCE(sat) Silicon Large peak collector current ICP PNP epitaxial planer Mini power type package Lead Free Finish/RoHS Compliant ("P" Suffix desi

Power Transistors2SB1071, 2SB1071ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm10.00.2 4.20.25.50.2 2.70.2 Features Low collector-emitter saturation voltage VCE(sat) 3.10.1 High-speed switching Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings TC = 25C 1.30.21.40.1Pa

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

Power Transistors2SB1070, 2SB1070ASilicon PNP epitaxial planar typeFor low-voltage switchingUnit: mm8.50.2 3.40.36.00.2 1.00.1 Features Low collector-emitter saturation voltage VCE(sat) High-speed switching N type package enabling direct soldering of the radiating fin to the0 to 0.4printed circuit board, etc. of small electronic equipmentR = 0.50.

Transistor2SB1073Silicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mm1.5 0.14.5 0.1Features 1.6 0.2Low collector to emitter saturation voltage VCE(sat).Large peak collector current ICP. 45Mini Power type package, allowing downsizing of the equipmentand automatic insertion through the tape packing and the maga-zine packing.0.4 0.080.4

2SB1078(K) PCB242SB1078(K)Silicon PNP EpitaxialApplicationLow frequency power amplifierOutlineAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7 VCollector current IC 8 ACollector

2SB1072(L), 2SB1072(S)Silicon PNP Triple DiffusedApplicationMedium speed power amplifierOutlineDPAK42, 44112ID1. Base3 2. Collector3. EmitterS Type 12 3 k 0.4 k4. Collector3(Typ) (Typ)L Type 32SB1072(L), 2SB1072(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 100 VCollector to emitter volt

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SB1073 TRANSISTOR (PNP) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Large peak collector current IC 2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3 Symbol Parameter Value UnitVCBO -30 VCollector-Base V

JMnic Product Specification Silicon PNP Power Transistors 2SB1075 DESCRIPTION With TO-126 package High collector-peak current Low collector saturation voltage APPLICATIONS For audio frequency output amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SB1071 -40VCBO C

2SB1 07 3TRANSISTORFEATURES Low collector-emitter saturation voltage VCE(sat) Large peak collector current IC MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO -30 VCollector-Base Voltage VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -7 V IC Collector Current -Continuous -4 A PC Collector Power Dissipation 0.5 W TJ

2SB1073 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.6B4.42 1.63. EMITTER 1.81.41.43 Features 2.64.252.43.75 Low collector-emitter saturation voltage VCE(sat) 0.8MIN0.53Large peak collector current IC 0.400.480.442x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Dimensions in inches and (mil

FM120-M WILLAS THRU2SB1073 SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offersTRANSISTOR r reverse leakage current and thermal resistance.(PNP) betteSOD-123HSOT-89 LoFEATURES w profile s

SMD Type TransistorsPNP Transistors2SB1070ATO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching.0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin

SMD Type TransistorsPNP Transistors2SB1070TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features+0.25.30-0.2 +0.80.50 -0.7 Low collector-emitter saturation voltage VCE(sat). High-speed switching.0.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

SMD Type TransistorsPNP Transistors2SB1073 Features1.70 0.1 Low collector to emitter saturation voltage VCE(sat). Large peak collector current ICP.0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltage VE

isc Silicon PNP Power Transistor 2SB1075DESCRIPTIONHigh Collector Current -I = -2ACCollector-Emitter Breakdown Voltage-: V = -40V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage: V = -1.0V(Max.)@ I = -3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier

isc Silicon PNP Power Transistor 2SB1071DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max)@I = -2ACE(sat) CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

INCHANGE Semiconductorisc Silicon PNP Darlington Power Transistor 2SB1077DESCRIPTIONSilicon NPN triple diffusedLow Collector-Emitter Saturation VoltageComplement to Type 2SD1558Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifierABSOLUTE MAXIMUM RATINGS (Ta=25)SYMBOL PARAMETER V

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1071 2SB1071A DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching APPLICATIONS For low voltage switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2S