Биполярный транзистор 2SB1085A
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB1085A
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-база (Ucb): 160
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 20
MHz
Статический коэффициент передачи тока (hfe): 140
Корпус транзистора:
TO220
Аналоги (замена) для 2SB1085A
2SB1085A
Datasheet (PDF)
..2. Size:157K jmnic
2sb1085a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo
..3. Size:123K inchange semiconductor
2sb1085a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (
7.1. Size:157K jmnic
2sb1085.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol
7.2. Size:216K inchange semiconductor
2sb1085.pdf 
isc Silicon PNP Power Transistor 2SB1085DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1562Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.1. Size:146K jmnic
2sb1086a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute ma
8.2. Size:146K jmnic
2sb1086.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maxi
8.3. Size:146K jmnic
2sb1087.pdf 
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
8.4. Size:115K inchange semiconductor
2sb1086a.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
8.5. Size:215K inchange semiconductor
2sb1086.pdf 
isc Silicon PNP Power Transistor 2SB1086DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.6. Size:218K inchange semiconductor
2sb1087.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1087DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLU
8.7. Size:218K inchange semiconductor
2sb1089.pdf 
isc Silicon PNP Power Transistor 2SB1089DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
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