2SB109B - описание и поиск аналогов

DATA SHEET SILICON POWER TRANSISTOR 2SB1094 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIER FEATURES PACKAGE DRAWING (UNIT mm) The 2SB1094 features ratings covering a wide range of applications and is ideal for power supplies or a variety of drives in audio and other equipment. VCEO -60 V, VEBO -7.0 V, IC(DC) -3.0 A Mold package that does not r

DATA SHEET SILICON POWER TRANSISTOR 2SB1097 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = -0.5 V MAX. (@ -5 A)

2SB1091 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 1 3. Emitter 3.5 k 2 3 (Typ) 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 8 A Col

JMnic Product Specification Silicon PNP Power Transistors 2SB1094 DESCRIPTION With TO-220Fa package Complement to type 2SD1585 APPLICATIONS Ideal for power supplies or variety or in audio and other equipment PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

JMnic Product Specification Silicon PNP Power Transistors 2SB1098 DESCRIPTION With TO-220F package Complement to type 2SD1589 DARLINGTON High DC current gain APPLICATIONS Low speed switching industrial use Low frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Base Absolute maximum ratin

JMnic Product Specification Silicon PNP Power Transistors 2SB1097 DESCRIPTION With TO-220Fa package Low collector saturation voltage Complement to type 2SD1588 APPLICATIONS For low frequency power amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon PNP Power Transistors 2SB1096 DESCRIPTION With TO-220Fa package High breakdown voltage Complement to type 2SD1587 APPLICATIONS For TV vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open em

isc Silicon PNP Power Transistor 2SB1094 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1585 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM

isc Silicon PNP Darlington Power Transistor 2SB1098 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h =2000(Min)@ (V = -2V, I = -3A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low speed switching industrial Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(T

isc Silicon PNP Power Transistor 2SB1095 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1586 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SB1097 DESCRIPTION High Collector Current I = -7A C Low Collector Saturation Voltage V = -0.5V(Max)@I = -5A CE(sat) C Complement to Type 2SD1588 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplifiers and low speed switching applications. ABSOLUTE MAXI

isc Silicon PNP Power Transistor 2SB1096 DESCRIPTION High Collector Current I = -2A C Good Linearity of h FE Complement to Type 2SD1587 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

isc Silicon PNP Power Transistor 2SB1090 DESCRIPTION High Collector Current I = -4A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -3A CE(sat) C Complement to Type 2SD1568 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM