2SB110 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2SB110 Даташит. Аналоги

   Наименование производителя: 2SB110
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.05 A
   Предельная температура PN-перехода (Tj): 75 °C
   Граничная частота коэффициента передачи тока (ft): 0.4 MHz
   Ёмкость коллекторного перехода (Cc): 30 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO5

Аналог (замена) для 2SB110

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2SB110 Datasheet (PDF)

0.1. Size:104K panasonic
2sb1108.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

0.2. Size:404K hitachi
2sb1101 2sb1102.pdf pdf_icon

0.3. Size:36K hitachi
2sb1103.pdf pdf_icon

2SB1103Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 4.0 k 200 23(Typ) (Typ)32SB1103Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VC

0.4. Size:389K hitachi
2sb1109 2sb1110.pdf pdf_icon

0.5. Size:152K jmnic
2sb1103.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbs

0.6. Size:156K jmnic
2sb1101.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max

0.7. Size:147K jmnic
2sb1105.pdf pdf_icon

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB

0.8. Size:150K jmnic
2sb1102.pdf pdf_icon

JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max

0.9. Size:155K jmnic
2sb1106.pdf pdf_icon

JMnic Product SpecificationSilicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB

0.10. Size:214K inchange semiconductor
2sb1103.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

0.11. Size:218K inchange semiconductor
2sb1100.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1100DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CComplement to Type 2SD1591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current

0.12. Size:213K inchange semiconductor
2sb1101.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB

0.13. Size:213K inchange semiconductor
2sb1105.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CComplement to Type 2SD1605Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.

0.14. Size:213K inchange semiconductor
2sb1102.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1102DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1602Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB

0.15. Size:214K inchange semiconductor
2sb1106.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor 2SB1106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25

Другие транзисторы... 2SB1094 , 2SB1095 , 2SB1096 , 2SB1097 , 2SB1098 , 2SB1099 , 2SB109A , 2SB109B , TIP122 , 2SB1100 , 2SB1101 , 2SB1102 , 2SB1103 , 2SB1104 , 2SB1105 , 2SB1106 , 2SB1107 .