Биполярный транзистор 2SB110 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SB110
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 0.4 MHz
Ёмкость коллекторного перехода (Cc): 30 pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO5
2SB110 Datasheet (PDF)
2sb1108.pdf
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2sb1103.pdf
2SB1103Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 4.0 k 200 23(Typ) (Typ)32SB1103Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VC
2sb1103.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbs
2sb1101.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max
2sb1105.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB
2sb1102.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max
2sb1106.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB
2sb1103.pdf
isc Silicon PNP Darlington Power Transistor 2SB1103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25
2sb1100.pdf
isc Silicon PNP Darlington Power Transistor 2SB1100DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CComplement to Type 2SD1591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current
2sb1101.pdf
isc Silicon PNP Darlington Power Transistor 2SB1101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB
2sb1105.pdf
isc Silicon PNP Darlington Power Transistor 2SB1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CComplement to Type 2SD1605Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.
2sb1102.pdf
isc Silicon PNP Darlington Power Transistor 2SB1102DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1602Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB
2sb1106.pdf
isc Silicon PNP Darlington Power Transistor 2SB1106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050