2SB1100 - описание и поиск аналогов

isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ I = -10A FE C Complement to Type 2SD1591 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed high current

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SB1103 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 4.0 k 200 2 3 (Typ) (Typ) 3 2SB1103 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emitter voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V C

JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Abs

JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute max

JMnic Product Specification Silicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMB

JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute max

JMnic Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25 ) SYMB

isc Silicon PNP Darlington Power Transistor 2SB1101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. AB

isc Silicon PNP Darlington Power Transistor 2SB1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -1.5A) FE CE C Complement to Type 2SD1605 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications.

isc Silicon PNP Darlington Power Transistor 2SB1102 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = -3V, I = -2A) FE CE C Complement to Type 2SD1602 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. AB