Биполярный транзистор 2SB1109B
Даташит. Аналоги
Наименование производителя: 2SB1109B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-база (Ucb): 160
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 175
°C
Граничная частота коэффициента передачи тока (ft): 140
MHz
Ёмкость коллекторного перехода (Cc): 5.5
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
TO126
- подбор биполярного транзистора по параметрам
2SB1109B
Datasheet (PDF)
8.1. Size:104K panasonic
2sb1108.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.3. Size:36K hitachi
2sb1103.pdf 
2SB1103Silicon PNP Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 4.0 k 200 23(Typ) (Typ)32SB1103Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to emitter voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VC
8.4. Size:152K jmnic
2sb1103.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1103 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Low collector saturation voltage Complement to type 2SD1603 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbs
8.5. Size:156K jmnic
2sb1101.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1101 DESCRIPTION With TO-220 package Complement to type 2SD1601 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max
8.6. Size:147K jmnic
2sb1105.pdf 
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1105 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1605 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB
8.7. Size:150K jmnic
2sb1102.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1102 DESCRIPTION With TO-220 package Complement to type 2SD1602 DARLINGTON High DC current gain APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute max
8.8. Size:155K jmnic
2sb1106.pdf 
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1106 DESCRIPTION With TO-220C package DARLINGTON High DC durrent gain Complement to type 2SD1606 APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMB
8.9. Size:214K inchange semiconductor
2sb1103.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -4A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.10. Size:218K inchange semiconductor
2sb1100.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1100DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ I = -10AFE CComplement to Type 2SD1591Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed high current
8.11. Size:213K inchange semiconductor
2sb1101.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1101DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB
8.12. Size:213K inchange semiconductor
2sb1105.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -1.5A)FE CE CComplement to Type 2SD1605Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.
8.13. Size:213K inchange semiconductor
2sb1102.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1102DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = -3V, I = -2A)FE CE CComplement to Type 2SD1602Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.AB
8.14. Size:214K inchange semiconductor
2sb1106.pdf 
isc Silicon PNP Darlington Power Transistor 2SB1106DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V(Min)(BR)CEOHigh DC Current Gain-: h =1000(Min)@ (V = -3V, I = -3A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25
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History: 2SC3532
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| H643
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