2SB112 - описание и поиск аналогов

Ordering number ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1124/2SD1624] Features 4.5 1.5 1.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number EN2040B 2SB1122 / 2SD1622 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1122 / 2SD1622 Low-Frequency Power Amplifier Applications Applications Voltage regulators relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid IC s. S

Ordering number 1786A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1120 High-Current Driver Applications Applications Package Dimensions Strobes, voltage regulators, relay drivers, lamp unit mm drivers. 2038 [2SB1120] Features Low collector-to-emitter saturation voltage VCE(sat)max= 0.45V. Large current capacity IC= 2.5A, ICP= 5A. Very small size maki

Ordering number EN1787B 2SB1121 / 2SD1621 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1121 / 2SD1621 High-Current Driver Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity

Ordering number EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number 2452 PNP Epitaxial Planar Silicon Transistor 2SB1127 20V/5A Switching Applications Applications Package Dimensions Strobe, power supplies, relay drivers, lamp drivers. unit mm 2009A Features [2SB1127] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity. Fast switching speed. JEDEC TO-126 B Base C Collector E

Ordering number EN2019B 2SB1124/2SD1624 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

Ordering number EN2040C 2SB1122 Bipolar Transistor http //onsemi.com ( ) 50V, 1A, Low VCE sat PNP Single PCP Applicaitons Voltage regulators relay drivers, lamp drivers, electrical equipment Features Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

Ordering number EN1787C 2SB1121 Bipolar Transistor http //onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma

Ordering number EN1727F 2SB1123/2SD1623 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperatu

SMD Type Transistors PNP Transistors 2SB1126 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-50V Complements the 2SD1626 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO

SMD Type IC PNP Transistors 2SB1122 Features 1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Complementary to 2SD1622 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter

SMD Type Transistors PNP Transistors 2SB1120 1.70 0.1 Features Very small size making it easy to provide high highdensity, small-sized hybrid IC s. Low collector-to-emitter saturation voltage Large current capacity IC= 2.5A, ICP= 5A. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Col

SMD Type Transistors PNP Transistors 2SB1125 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=-0.7A Collector Emitter Voltage VCEO=-50V Complements the 2SD1625 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO

SMD Type Transistors PNP Transistors 2SB1121 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary to 2SD1621 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector -

SMD Type Transistors PNP Transistors 2SB1124 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SD1624 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector -

SMD Type Transistors PNP Transistors 2SB1123 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary to 2SD1623 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector -

2SB1123 PNP-Silicon General use Transistors 1W 1.5A 25V 4 2 1 3 Applications Can be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base voltage IC=0 IC 1.5 A Collect