Ordering number:2452PNP Epitaxial Planar Silicon Transistor2SB112720V/5A Switching ApplicationsApplications Package Dimensions Strobe, power supplies, relay drivers, lamp drivers. unit:mm2009AFeatures [2SB1127] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity. Fast switching speed.JEDEC : TO-126 B : BaseC : CollectorE :

Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number : EN2040B2SB1122 / 2SD1622SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1122 / 2SD1622Low-Frequency Power Amplifier ApplicationsApplications Voltage regulators relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET process. Ultrasmall size making it easy to provide high-density hybrid ICs.S

Ordering number:1786APNP/NPN Epitaxial Planar Silicon Transistors2SB1120High-Current Driver ApplicationsApplications Package Dimensions Strobes, voltage regulators, relay drivers, lampunit:mmdrivers.2038[2SB1120]Features Low collector-to-emitter saturation voltage : VCE(sat)max=0.45V. Large current capacity : IC=2.5A, ICP=5A. Very small size maki

Ordering number : EN1787B2SB1121 / 2SD1621SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1121 / 2SD1621High-Current Driver ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity

Ordering number : EN1727E2SB1123 / 2SD1623SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

Ordering number : EN2040C2SB1122Bipolar Transistorhttp://onsemi.com ( )50V, 1A, Low VCE sat PNP Single PCPApplicaitons Voltage regulators relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET process Ultrasmall size making it easy to provide high-density hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number : EN1787C 2SB1121 Bipolar Transistor http://onsemi.com -25V, -2A, Low VCE(sat) PNP Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector to emitter saturation voltage Large current capacity and wide SOA Fast switching speed Ultrasmall size ma

Ordering number : EN1727F2SB1123/2SD1623Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperatu

SMD Type TransistorsPNP Transistors2SB1126SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-1.5A Collector Emitter Voltage VCEO=-50V Complements the 2SD16260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO

SMD Type ICPNP Transistors2SB1122 Features1.70 0.1 Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Complementary to 2SD16220.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter

SMD Type TransistorsPNP Transistors2SB11201.70 0.1 Features Very small size making it easy to provide high highdensity, small-sized hybrid ICs. Low collector-to-emitter saturation voltage Large current capacity : IC=2.5A, ICP=5A. 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Col

SMD Type TransistorsPNP Transistors2SB1125SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=-0.7A Collector Emitter Voltage VCEO=-50V Complements the 2SD16250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO

SMD Type TransistorsPNP Transistors2SB11211.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary to 2SD16211.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector -

SMD Type TransistorsPNP Transistors2SB1124 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SD16240.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector -

SMD Type TransistorsPNP Transistors2SB11231.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary to 2SD16231.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector -

2SB1123PNP-Silicon General use Transistors1W 1.5A25V 4 2 1 3ApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACollect