JMnic Product Specification Silicon PNP Power Transistors 2SB1134 DESCRIPTION With TO-220F package Complement to type 2SD1667 Low collector saturation voltage APPLICATIONS Relay drivers,high-speed inverters and other general high-current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAb

isc Silicon PNP Power Transistor 2SB1134DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -3ACE(sat) CComplement to Type 2SD1667Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, and othergenera

Ordering number:2420BPNP Epitaxial Planar Silicon Transistor2SB1131Strobe, High-Current Switching ApplicationsApplications Package Dimensions Strobes, power supplies, relay drivers, lamp drivers. unit:mm2006AFeatures [2SB1131] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity. Fast switching time.EIAJ : SC-51 B : BaseSANYO

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

Medium Power Transistor (32V,1A) 2SB1132 / 2SA1515S / 2SB1237 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SB1132 2SA1515SVCE(sat) = 0.2V(Typ.) + +4 0.2 2 0.2- -4.5 +0.2 -0.1(IC / IB = 500mA / 50mA) 1.5 +0.2+1.6 0.1 -0.1-2) Compliments 2SD1664 / 2SD1858 (1) (2) (3) 0.45 +0.15 -0.050.4 +0.1Structure -0.05++ 0.5 0.10.

TransistorsMedium Power Transistor (*32V, *1A)2SB1132 / 2SA1515S / 2SB1237FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = *0.2V (Typ.)(IC / IB = 500mA / 50mA)2) Compliments 2SD1664 /2SD1858.FStructureEpitaxial planar typePNP silicon transistor(96-120-B12)207Transistors 2SB1132 / 2SA1515S / 2SB1237FAbsolute maximum ratings (Ta = 25_C)

UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicontransistor. FEATURES * Low VCE(SAT). VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SB1132L-x-AB3-R 2SB1132G

2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4MARKING 123 1 1 3 2 A Date Code ECB DCLASSIFICATION OF hFE F GProduct Rank 2SB1132-P 2SB1132-Q 2SB1132-R H KJ LRange 82~180 120~270 180~390 Millim

2SB1133 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 20 W Junction Tem

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1132 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Low VCE(sat) Compliments 2SD1664 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 VVCEO Collector-Emitter Voltage -32 V

JMnic Product Specification Silicon PNP Power Transistors 2SB1136 DESCRIPTION With TO-220F package Complement to type 2SD1669 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters,converters General high current switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

JMnic Product Specification Silicon PNP Power Transistors 2SB1135 DESCRIPTION With TO-220F package Complement to type 2SD1668 Low collector saturation voltage Wide ASO APPLICATIONS Relay drivers High speed inverters;converters General high current switching application PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220F) and

JMnic Product Specification Silicon PNP Power Transistors 2SB1133 DESCRIPTION With TO-220F package Complement to type 2SD1666 Low collector saturation voltage Wide area of safe operation APPLICATIONS For low-frequency and general-purpose amplifier applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 Emitter

2SB1 1 32TRANSISTOR (PNP) FEATURES Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA SOT-89 Compliments 2SD1664 MAXIMUM RATINGS (TA=25 unless otherwise noted) 1. BASE Symbol Parameter Value Units2. COLLECTOR 1 VCBO Collector-Base Voltage -40 V2 VCEO Collector-Emitter Voltage -32 V3. EMITTER 3 VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1

2SB1132 SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.61.82 1.43. EMITTER 1.43 2.64.252.43.75Features 0.8MIN Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA 0.530.400.480.442x)0.13 B0.35 Compliments 2SD1664 0.371.53.0Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol

2SB1132PNP Plastic-Encapsulate TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValue-40VdcCollector-Emitter VoltageVCBOVdcCollector-Base Voltage -32VCEOVdcEmitter-Base VoltageVEBO -5.0ICA(DC)-1.0Collector CurrentICP-2.0 A (Pulse)*PC 0.5Collector Power Dissipation W%CStorage Tempera

FM120-M WILLAS2SB1132THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesTRANSISTOR ocess design, excellent power dissipation offers (PNP) Batch pr betteSOD-123HFEATURES r reverse leakage current and thermal resistance. Low profile surface mount

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SB1132 TRANSISTOR (PNP) 1. BASE FEATURES Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA 2. COLLECTOR 1 Compliments 2SD1664 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 VVCEO Collector-

2SB1132 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , 2SD1664 Low VCE(sat),complements the 2SD1664. / Applications Medium power amplifier applications. / Equivalent Circui

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Stora

SMD Type TransistorsPNP Transistors2SB1132Features 1.70 0.1Low VCE(sat)Compliments to 2SD16640.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -32 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) -1 AICSingle pulse, PW=100ms -2 ACollector

CHENMKO ENTERPRISE CO.,LTD2SB1132GPSURFACE MOUNT PNP Medium Power TransistorVOLTAGE 32 Volts CURRENT 1 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-62/SOT-89* Small flat package. ( SC-62/SOT-89 )* High current gain. * Suitable for high packing density.4.6MAX. 1.6MAX.* Low colloector-emitter saturation.

2SB1132PNP Transistors3Features2Low VCE(sat)1.BaseCompliments to 2SD166412.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -32 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) -1 AICSingle pulse, PW=100ms -2 ACollector Power Dis

2SB1132SQ PNP Transistor Features SOT-89 Low saturation voltage1. Base 2. Collector 3.Emitter Marking: 1132P1132Q 1132RAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 40 V CBOCollector Emitter Voltage -V 32 V CEOEmitter Base Voltage -V 5 V EBOCollector Current

2SB1132PNP Transistors3Features2Low VCE(sat)1.BaseCompliments to 2SD166412.Collector3.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -32 VEmitter-Base Voltage VEBO -5 VCollector Current (DC) -1 AICSingle pulse, PW=100ms -2 ACollector Power Dis

2SB11322SB1132 TRANSISTOR (PNP) Features: Compliments 2SD1664MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbl Parameter Value Unit V VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 1. BASE A IC Collector Current-Continuous -1 A I Collector Current -Pulsed CP -2 2. COLLECTOR mW PC Collec

Plastic-Encapsulate TransistorsFEATURES2SB1132 (PNP) Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA Compliments 2SD1664Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -40 V1. BASECollector-Emitter Voltage VCEO -32 V2. COLLECTO SOT-89Emitter-Base Voltage VEBO -5 V 3. EMITTERCollector Current -Continuous IC -1 AColl

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SB1136DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -6ACE(sat) CComplement to Type 2SD1669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inver

isc Silicon PNP Power Transistor 2SB1135DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = -0.4V(Max.)@ I = -4ACE(sat) CComplement to Type 2SD1668Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, and othergenera

isc Silicon PNP Power Transistor 2SB1133DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SD1666Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAX